Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots
In this paper, we present an experiment study of the photoluminescence properties of self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs). High quality In0.5Ga0.5As QDs were grown by using Metalorganic Chemical Vapor Deposition (MOCVD). The low temperature photoluminescence (PL) spectrum of the In0.5...
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2006
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| Online Access: | http://eprints.utm.my/9300/ |
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| author | Wahab, Yussof Yeong, Wai Woon Derarnan, Karim Soh, Chew Beng Muhammad, Rosnita |
| author_facet | Wahab, Yussof Yeong, Wai Woon Derarnan, Karim Soh, Chew Beng Muhammad, Rosnita |
| author_sort | Wahab, Yussof |
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| content_provider | Universiti Teknologi Malaysia |
| content_source | UTM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | In this paper, we present an experiment study of the photoluminescence properties of self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs). High quality In0.5Ga0.5As QDs were grown by using Metalorganic Chemical Vapor Deposition (MOCVD). The low temperature photoluminescence (PL) spectrum of the In0.5Ga0.5As quantum dots surrounded by GaAs exhibit an emission peak at 1.137 to 1.182eV and a narrow linewidth (FWHM). The PL peak energy and intensity are varied with the excitation powers. Room temperature PL shows slightly lower peak energy with a broader spectrum linewidth. The distribution of the peak energy, peak intensity, and FWHM for the whole sample was obtained by using the PL mapping method. |
| format | Conference or Workshop Item |
| id | my.utm.eprints-9300 |
| institution | Universiti Teknologi Malaysia |
| publishDate | 2006 |
| record_format | eprints |
| spelling | my.utm.eprints-93002010-06-02T01:59:26Z http://eprints.utm.my/9300/ Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots Wahab, Yussof Yeong, Wai Woon Derarnan, Karim Soh, Chew Beng Muhammad, Rosnita QC Physics In this paper, we present an experiment study of the photoluminescence properties of self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs). High quality In0.5Ga0.5As QDs were grown by using Metalorganic Chemical Vapor Deposition (MOCVD). The low temperature photoluminescence (PL) spectrum of the In0.5Ga0.5As quantum dots surrounded by GaAs exhibit an emission peak at 1.137 to 1.182eV and a narrow linewidth (FWHM). The PL peak energy and intensity are varied with the excitation powers. Room temperature PL shows slightly lower peak energy with a broader spectrum linewidth. The distribution of the peak energy, peak intensity, and FWHM for the whole sample was obtained by using the PL mapping method. 2006-06 Conference or Workshop Item PeerReviewed Wahab, Yussof and Yeong, Wai Woon and Derarnan, Karim and Soh, Chew Beng and Muhammad, Rosnita (2006) Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots. In: Proceedings of Annual Fundamental Science Seminar 2006 (AFSS 2006), 6th - 7th June 2006, Universiti Teknologi Malaysia, Skudai, Malaysia. |
| spellingShingle | QC Physics Wahab, Yussof Yeong, Wai Woon Derarnan, Karim Soh, Chew Beng Muhammad, Rosnita Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots |
| title | Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots
|
| title_full | Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots
|
| title_fullStr | Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots
|
| title_full_unstemmed | Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots
|
| title_short | Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots
|
| title_sort | photoluminescence studies of in0.5ga0.5as/gaas quantum dots |
| topic | QC Physics |
| url | http://eprints.utm.my/9300/ |
| url_provider | http://eprints.utm.my/ |