Study on A.C properties of tin selenidethin films
A.c properties of tin selenide thin films prepared by an encapsulated selenization method are investigated. The measurements obtained from al/snse/al sandwich structures showed strong indication of frequency and temperature dependence of capacitance, dielectric loss and conductance over the ranges o...
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| Format: | Article |
| Language: | en |
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Faculty of Science, Universiti Teknologi Malaysia
2008
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| Online Access: | http://eprints.utm.my/8573/1/SamsudiSakrani2008_AStudyOnACProperties.pdf http://eprints.utm.my/8573/ |
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| author | Sakrani, Samsudi Othaman, Zulkafli Deraman, Karim Wahab, Yussof |
| author_facet | Sakrani, Samsudi Othaman, Zulkafli Deraman, Karim Wahab, Yussof |
| author_sort | Sakrani, Samsudi |
| building | UTM Library |
| collection | Institutional Repository |
| content_provider | Universiti Teknologi Malaysia |
| content_source | UTM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | A.c properties of tin selenide thin films prepared by an encapsulated selenization method are investigated. The measurements obtained from al/snse/al sandwich structures showed strong indication of frequency and temperature dependence of capacitance, dielectric loss and conductance over the ranges of 5-200 khz and 228-373 k, respectively. Dielectric behaviour was expected to be due to space charge polarization which contributed to a.c conduction. This was generally explained in terms of hopping of the charge carriers between localized states with activation energies 0.03-0.08 ev. Parameters such as trap binding energy (0.94 ev) and minimum hopping distance (1.01 nm) were also predicted |
| format | Article |
| id | my.utm.eprints-8573 |
| institution | Universiti Teknologi Malaysia |
| language | en |
| publishDate | 2008 |
| publisher | Faculty of Science, Universiti Teknologi Malaysia |
| record_format | eprints |
| spelling | my.utm.eprints-85732017-03-12T01:20:16Z http://eprints.utm.my/8573/ Study on A.C properties of tin selenidethin films Sakrani, Samsudi Othaman, Zulkafli Deraman, Karim Wahab, Yussof QC Physics A.c properties of tin selenide thin films prepared by an encapsulated selenization method are investigated. The measurements obtained from al/snse/al sandwich structures showed strong indication of frequency and temperature dependence of capacitance, dielectric loss and conductance over the ranges of 5-200 khz and 228-373 k, respectively. Dielectric behaviour was expected to be due to space charge polarization which contributed to a.c conduction. This was generally explained in terms of hopping of the charge carriers between localized states with activation energies 0.03-0.08 ev. Parameters such as trap binding energy (0.94 ev) and minimum hopping distance (1.01 nm) were also predicted Faculty of Science, Universiti Teknologi Malaysia 2008 Article PeerReviewed application/pdf en http://eprints.utm.my/8573/1/SamsudiSakrani2008_AStudyOnACProperties.pdf Sakrani, Samsudi and Othaman, Zulkafli and Deraman, Karim and Wahab, Yussof (2008) Study on A.C properties of tin selenidethin films. Jurnal Fizik UTM, 3 . pp. 99-108. ISSN 0128-8644 |
| spellingShingle | QC Physics Sakrani, Samsudi Othaman, Zulkafli Deraman, Karim Wahab, Yussof Study on A.C properties of tin selenidethin films |
| title | Study on A.C properties of tin selenidethin films
|
| title_full | Study on A.C properties of tin selenidethin films
|
| title_fullStr | Study on A.C properties of tin selenidethin films
|
| title_full_unstemmed | Study on A.C properties of tin selenidethin films
|
| title_short | Study on A.C properties of tin selenidethin films
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| title_sort | study on a.c properties of tin selenidethin films |
| topic | QC Physics |
| url | http://eprints.utm.my/8573/1/SamsudiSakrani2008_AStudyOnACProperties.pdf http://eprints.utm.my/8573/ |
| url_provider | http://eprints.utm.my/ |