Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane
The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good...
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| Language: | en |
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2006
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| Online Access: | http://eprints.utm.my/7630/1/Hashim_Abdul_Manaf_2006_Low_Temperature_Heteroepitaxial_Growth_3C-SiC_Si.pdf http://eprints.utm.my/7630/ http://dx.doi.org/10.1109/SMELEC.2006.380713 |
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| author | Hashim, Abdul Manaf Yasui, Kanji |
| author_facet | Hashim, Abdul Manaf Yasui, Kanji |
| author_sort | Hashim, Abdul Manaf |
| building | UTM Library |
| collection | Institutional Repository |
| content_provider | Universiti Teknologi Malaysia |
| content_source | UTM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good crystallinity and crystal orientation were successfully grown at 1100-1200°C. The crystallinity and the crystal orientation of SiC films grown at large dilution rate of above 200 and growth pressure of 0.3 - 0.7 Torr were better than those grown at small dilution rate and high growth pressure. Under large dilution rate, large amount of hydrogen radicals can be generated. It is speculated that excessive carbon atoms or weak bonds formed in SiC films were effectively extracted by the large amount of hydrogen radicals. |
| format | Conference or Workshop Item |
| id | my.utm.eprints-7630 |
| institution | Universiti Teknologi Malaysia |
| language | en |
| publishDate | 2006 |
| record_format | eprints |
| spelling | my.utm.eprints-76302010-06-01T15:54:07Z http://eprints.utm.my/7630/ Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane Hashim, Abdul Manaf Yasui, Kanji TK Electrical engineering. Electronics Nuclear engineering The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good crystallinity and crystal orientation were successfully grown at 1100-1200°C. The crystallinity and the crystal orientation of SiC films grown at large dilution rate of above 200 and growth pressure of 0.3 - 0.7 Torr were better than those grown at small dilution rate and high growth pressure. Under large dilution rate, large amount of hydrogen radicals can be generated. It is speculated that excessive carbon atoms or weak bonds formed in SiC films were effectively extracted by the large amount of hydrogen radicals. 2006 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/7630/1/Hashim_Abdul_Manaf_2006_Low_Temperature_Heteroepitaxial_Growth_3C-SiC_Si.pdf Hashim, Abdul Manaf and Yasui, Kanji (2006) Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane. In: IEEE International Conference on Semiconductor Electronics,Proceedings, ICSE, 29 Oct- 1 Dec 2006, Kuala Lumpur,Malaysia. http://dx.doi.org/10.1109/SMELEC.2006.380713 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Hashim, Abdul Manaf Yasui, Kanji Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane |
| title | Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane |
| title_full | Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane |
| title_fullStr | Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane |
| title_full_unstemmed | Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane |
| title_short | Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane |
| title_sort | low temperature heteroepitaxial growth of 3c-sic on si substrates by rapid thermal triode plasma cvd using dimethylsilane |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/7630/1/Hashim_Abdul_Manaf_2006_Low_Temperature_Heteroepitaxial_Growth_3C-SiC_Si.pdf http://eprints.utm.my/7630/ http://dx.doi.org/10.1109/SMELEC.2006.380713 |
| url_provider | http://eprints.utm.my/ |