Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers
Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I-V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was im...
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| Format: | Conference or Workshop Item |
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2007
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| Online Access: | http://eprints.utm.my/7628/ http://dx.doi.org/10.1063/1.2739849 |
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| _version_ | 1845471846441418752 |
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| author | Hashim, Abdul Manaf Kasai, Seiya Lizuki, Kouichi Hashizume, Tamotsu Hasegawa, Hideki |
| author_facet | Hashim, Abdul Manaf Kasai, Seiya Lizuki, Kouichi Hashizume, Tamotsu Hasegawa, Hideki |
| author_sort | Hashim, Abdul Manaf |
| building | UTM Library |
| collection | Institutional Repository |
| content_provider | Universiti Teknologi Malaysia |
| content_source | UTM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I-V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was improved compared to the dc connected interdigital gate structure. Admittance measurements of capacitively coupled interdigital gate structure in the microwave region of 10-40 GHz showed the conductance modulation by drain-source voltage. These results indicate the existence of plasma wave interactions. |
| format | Conference or Workshop Item |
| id | my.utm.eprints-7628 |
| institution | Universiti Teknologi Malaysia |
| publishDate | 2007 |
| record_format | eprints |
| spelling | my.utm.eprints-76282017-08-01T06:46:23Z http://eprints.utm.my/7628/ Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers Hashim, Abdul Manaf Kasai, Seiya Lizuki, Kouichi Hashizume, Tamotsu Hasegawa, Hideki TK Electrical engineering. Electronics Nuclear engineering Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I-V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was improved compared to the dc connected interdigital gate structure. Admittance measurements of capacitively coupled interdigital gate structure in the microwave region of 10-40 GHz showed the conductance modulation by drain-source voltage. These results indicate the existence of plasma wave interactions. 2007 Conference or Workshop Item PeerReviewed Hashim, Abdul Manaf and Kasai, Seiya and Lizuki, Kouichi and Hashizume, Tamotsu and Hasegawa, Hideki (2007) Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers. In: AIP Conference Proceedings, 04 - 06th Sept. 2006, Kuala Terengganu, Malaysia. http://dx.doi.org/10.1063/1.2739849 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Hashim, Abdul Manaf Kasai, Seiya Lizuki, Kouichi Hashizume, Tamotsu Hasegawa, Hideki Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers |
| title | Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers |
| title_full | Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers |
| title_fullStr | Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers |
| title_full_unstemmed | Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers |
| title_short | Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers |
| title_sort | design, fabrication and characterization of gaas-based interdigital-gated hemt devices for solid-state thz wave amplifiers |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/7628/ http://dx.doi.org/10.1063/1.2739849 |
| url_provider | http://eprints.utm.my/ |