Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier
Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I-V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was im...
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| Format: | Article |
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Elsevier
2007
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| Online Access: | http://eprints.utm.my/7627/ http://dx.doi.org/10.1016/j.mejo.2007.09.027 |
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| _version_ | 1845471846188711936 |
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| author | Hashim, Abdul Manaf Kasai , Seiya Iizuki, Kouichi Hashizume, Tamotsu Hasegawa, Hideki |
| author_facet | Hashim, Abdul Manaf Kasai , Seiya Iizuki, Kouichi Hashizume, Tamotsu Hasegawa, Hideki |
| author_sort | Hashim, Abdul Manaf |
| building | UTM Library |
| collection | Institutional Repository |
| content_provider | Universiti Teknologi Malaysia |
| content_source | UTM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I-V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was improved compared to the dc-connected interdigital gate structure. Admittance measurements of capacitively coupled interdigital gate structure in the microwave region of 10-40 GHz showed the conductance modulation by drain-source voltage. These results indicate the existence of plasma wave interactions. |
| format | Article |
| id | my.utm.eprints-7627 |
| institution | Universiti Teknologi Malaysia |
| publishDate | 2007 |
| publisher | Elsevier |
| record_format | eprints |
| spelling | my.utm.eprints-76272009-12-24T04:29:50Z http://eprints.utm.my/7627/ Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier Hashim, Abdul Manaf Kasai , Seiya Iizuki, Kouichi Hashizume, Tamotsu Hasegawa, Hideki TK Electrical engineering. Electronics Nuclear engineering Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I-V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was improved compared to the dc-connected interdigital gate structure. Admittance measurements of capacitively coupled interdigital gate structure in the microwave region of 10-40 GHz showed the conductance modulation by drain-source voltage. These results indicate the existence of plasma wave interactions. Elsevier 2007-12 Article PeerReviewed Hashim, Abdul Manaf and Kasai , Seiya and Iizuki, Kouichi and Hashizume, Tamotsu and Hasegawa, Hideki (2007) Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier. Microelectronics Journal, 38 (12). pp. 1268-1272. ISSN 0026-2692 http://dx.doi.org/10.1016/j.mejo.2007.09.027 doi :10.1016/j.mejo.2007.09.027 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Hashim, Abdul Manaf Kasai , Seiya Iizuki, Kouichi Hashizume, Tamotsu Hasegawa, Hideki Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier |
| title | Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier |
| title_full | Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier |
| title_fullStr | Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier |
| title_full_unstemmed | Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier |
| title_short | Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier |
| title_sort | novel structure of gaas-based interdigital-gated hemt plasma devices for solid-state thz wave amplifier |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/7627/ http://dx.doi.org/10.1016/j.mejo.2007.09.027 |
| url_provider | http://eprints.utm.my/ |