Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method
A process of making a symmetrical self-aligned n-type vertical double-gate MOSFET (n-VDGM) over a silicon pillar is revealed. This process utilizes the technique of oblique rotating ion implantation (ORI). The self-aligned region forms a sharp vertical channel profile and decreases the channel lengt...
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| Format: | Article |
| Language: | en |
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Elsevier
2008
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| Online Access: | http://eprints.utm.my/7517/1/Razali_Ismail_2008_Self-aligned_Verticaldouble-gateMOSFET.pdf http://eprints.utm.my/7517/ http://dx.doi.org/10.1016/j.mejo.2008.03.007 |
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| _version_ | 1845471823488090112 |
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| author | Saad, Ismail Ismail, Razali |
| author_facet | Saad, Ismail Ismail, Razali |
| author_sort | Saad, Ismail |
| building | UTM Library |
| collection | Institutional Repository |
| content_provider | Universiti Teknologi Malaysia |
| content_source | UTM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | A process of making a symmetrical self-aligned n-type vertical double-gate MOSFET (n-VDGM) over a silicon pillar is revealed. This process utilizes the technique of oblique rotating ion implantation (ORI). The self-aligned region forms a sharp vertical channel profile and decreases the channel length Lg. A tremendous improvement in the drive-on current is noted. The electron concentration profile obtained demonstrates an increased number of electrons in the channel injected from the source end as the drain voltage increases. The enhanced carrier concentration results in significant reduction in the off-state leakage current and improves the drain-induced barrier-lowering (DIBL) effect. These simulated characteristics when compared to those in a fabricated device without the ORI method show the distinct advantage of the technique reported for suppression of short-channel effects (SCE) in nanoscale vertical MOSFET. |
| format | Article |
| id | my.utm.eprints-7517 |
| institution | Universiti Teknologi Malaysia |
| language | en |
| publishDate | 2008 |
| publisher | Elsevier |
| record_format | eprints |
| spelling | my.utm.eprints-75172017-02-21T06:53:18Z http://eprints.utm.my/7517/ Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method Saad, Ismail Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering A process of making a symmetrical self-aligned n-type vertical double-gate MOSFET (n-VDGM) over a silicon pillar is revealed. This process utilizes the technique of oblique rotating ion implantation (ORI). The self-aligned region forms a sharp vertical channel profile and decreases the channel length Lg. A tremendous improvement in the drive-on current is noted. The electron concentration profile obtained demonstrates an increased number of electrons in the channel injected from the source end as the drain voltage increases. The enhanced carrier concentration results in significant reduction in the off-state leakage current and improves the drain-induced barrier-lowering (DIBL) effect. These simulated characteristics when compared to those in a fabricated device without the ORI method show the distinct advantage of the technique reported for suppression of short-channel effects (SCE) in nanoscale vertical MOSFET. Elsevier 2008-12 Article PeerReviewed application/pdf en http://eprints.utm.my/7517/1/Razali_Ismail_2008_Self-aligned_Verticaldouble-gateMOSFET.pdf Saad, Ismail and Ismail, Razali (2008) Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method. Microelectronics Journal, 39 (12). pp. 1538-1541. ISSN 0026-2692 http://dx.doi.org/10.1016/j.mejo.2008.03.007 10.1016/j.mejo.2008.03.007 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Saad, Ismail Ismail, Razali Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method |
| title | Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method |
| title_full | Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method |
| title_fullStr | Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method |
| title_full_unstemmed | Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method |
| title_short | Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method |
| title_sort | self-aligned vertical double-gate mosfet (vdgm) with the oblique rotating ion implantation (ori) method |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/7517/1/Razali_Ismail_2008_Self-aligned_Verticaldouble-gateMOSFET.pdf http://eprints.utm.my/7517/ http://dx.doi.org/10.1016/j.mejo.2008.03.007 |
| url_provider | http://eprints.utm.my/ |