Characterization of strained silicon MOSFET using semiconductor TCAD tools
The paper is looking into the enhancement of conventional PMOS by incorporating a strained silicon within the channel and bulk of semiconductor. A detailed 2D process simulation of strained silicon PMOS (SSPMos) and its electrical characterization was done using TCAD tool. With the oxide thickness,...
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| Format: | Conference or Workshop Item |
| Language: | en |
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2006
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| Online Access: | http://eprints.utm.my/7495/1/Razali_Ismail_2006_Characterization_of_Strained_Silicon_MOSFET.pdf http://eprints.utm.my/7495/ http://dx.doi.org/10.1109/SMELEC.2006.380774 |
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| _version_ | 1845471819362992128 |
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| author | Wong, Yah Jin Saad, Ismail Ismail, Razali |
| author_facet | Wong, Yah Jin Saad, Ismail Ismail, Razali |
| author_sort | Wong, Yah Jin |
| building | UTM Library |
| collection | Institutional Repository |
| content_provider | Universiti Teknologi Malaysia |
| content_source | UTM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | The paper is looking into the enhancement of conventional PMOS by incorporating a strained silicon within the channel and bulk of semiconductor. A detailed 2D process simulation of strained silicon PMOS (SSPMos) and its electrical characterization was done using TCAD tool. With the oxide thickness, Tox of 16 nm and germanium concentration of 35%, the threshold voltage Vt for the strained Si and conventional PMOS is -0.5067V and -0.9290V respectively. This indicates that the strained silicon had lower power consumption. Beside that, the drain induced barrier lowering (DIBL) value for the strained PMOS is 0.3034V and the conventional PMOS is 0.4747V, which shows a better performance for strained silicon as compared to conventional PMOS. In addition, the output characteristics were also obtained for SSPMos which showed an improvement of drain current compared with conventional PMOS. |
| format | Conference or Workshop Item |
| id | my.utm.eprints-7495 |
| institution | Universiti Teknologi Malaysia |
| language | en |
| publishDate | 2006 |
| record_format | eprints |
| spelling | my.utm.eprints-74952010-06-01T15:52:50Z http://eprints.utm.my/7495/ Characterization of strained silicon MOSFET using semiconductor TCAD tools Wong, Yah Jin Saad, Ismail Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering The paper is looking into the enhancement of conventional PMOS by incorporating a strained silicon within the channel and bulk of semiconductor. A detailed 2D process simulation of strained silicon PMOS (SSPMos) and its electrical characterization was done using TCAD tool. With the oxide thickness, Tox of 16 nm and germanium concentration of 35%, the threshold voltage Vt for the strained Si and conventional PMOS is -0.5067V and -0.9290V respectively. This indicates that the strained silicon had lower power consumption. Beside that, the drain induced barrier lowering (DIBL) value for the strained PMOS is 0.3034V and the conventional PMOS is 0.4747V, which shows a better performance for strained silicon as compared to conventional PMOS. In addition, the output characteristics were also obtained for SSPMos which showed an improvement of drain current compared with conventional PMOS. 2006-12 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/7495/1/Razali_Ismail_2006_Characterization_of_Strained_Silicon_MOSFET.pdf Wong, Yah Jin and Saad, Ismail and Ismail, Razali (2006) Characterization of strained silicon MOSFET using semiconductor TCAD tools. In: Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference, 29 Oct 2006-1 Dec 2006, Kuala Lumpur, Malaysia. http://dx.doi.org/10.1109/SMELEC.2006.380774 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Wong, Yah Jin Saad, Ismail Ismail, Razali Characterization of strained silicon MOSFET using semiconductor TCAD tools |
| title | Characterization of strained silicon MOSFET using semiconductor TCAD tools |
| title_full | Characterization of strained silicon MOSFET using semiconductor TCAD tools |
| title_fullStr | Characterization of strained silicon MOSFET using semiconductor TCAD tools |
| title_full_unstemmed | Characterization of strained silicon MOSFET using semiconductor TCAD tools |
| title_short | Characterization of strained silicon MOSFET using semiconductor TCAD tools |
| title_sort | characterization of strained silicon mosfet using semiconductor tcad tools |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/7495/1/Razali_Ismail_2006_Characterization_of_Strained_Silicon_MOSFET.pdf http://eprints.utm.my/7495/ http://dx.doi.org/10.1109/SMELEC.2006.380774 |
| url_provider | http://eprints.utm.my/ |