Epitaxial methods of quantum device growth
Epitaxy is an affordable method for growing high quality crystalline in quantum device applications. The fabrication of the quantum devices is an outstanding challenge in nanostructure materials science. During last few years, a lot of attention has been devoted to the growth and characterization fo...
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| Format: | Article |
| Language: | en |
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Faculty of Science
2009
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| Online Access: | http://eprints.utm.my/3829/1/RosnitaMuhammad2009_EpitaxialMethodsofQuantumDeviceGrowth.pdf http://eprints.utm.my/3829/ |
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| author | Muhammad, Rosnita Othaman, Zulkafli Sakrani, Samsudi Wahab, Yussof |
| author_facet | Muhammad, Rosnita Othaman, Zulkafli Sakrani, Samsudi Wahab, Yussof |
| author_sort | Muhammad, Rosnita |
| building | UTM Library |
| collection | Institutional Repository |
| content_provider | Universiti Teknologi Malaysia |
| content_source | UTM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | Epitaxy is an affordable method for growing high quality crystalline in quantum device applications. The fabrication of the quantum devices is an outstanding challenge in nanostructure materials science. During last few years, a lot of attention has been devoted to the growth and characterization for low dimensional semiconductor materials. In this paper, we present several epitaxy methods in recent advancement. We then briefly examine the one and only epitaxial method that we have at Ibnu Sina Institute, Universiti Teknologi Malaysia i.e MOCVD system; starting with basic chemical reaction process, gas delivery equipment, reaction chambers and safety. Growth mechanisms and criteria for growth rate are also will be discussed. Lastly, we show gallium arsenide nanowires that succesfully grown using MOCVD system |
| format | Article |
| id | my.utm.eprints-3829 |
| institution | Universiti Teknologi Malaysia |
| language | en |
| publishDate | 2009 |
| publisher | Faculty of Science |
| record_format | eprints |
| spelling | my.utm.eprints-38292017-02-22T04:02:14Z http://eprints.utm.my/3829/ Epitaxial methods of quantum device growth Muhammad, Rosnita Othaman, Zulkafli Sakrani, Samsudi Wahab, Yussof QC Physics Epitaxy is an affordable method for growing high quality crystalline in quantum device applications. The fabrication of the quantum devices is an outstanding challenge in nanostructure materials science. During last few years, a lot of attention has been devoted to the growth and characterization for low dimensional semiconductor materials. In this paper, we present several epitaxy methods in recent advancement. We then briefly examine the one and only epitaxial method that we have at Ibnu Sina Institute, Universiti Teknologi Malaysia i.e MOCVD system; starting with basic chemical reaction process, gas delivery equipment, reaction chambers and safety. Growth mechanisms and criteria for growth rate are also will be discussed. Lastly, we show gallium arsenide nanowires that succesfully grown using MOCVD system Faculty of Science 2009 Article PeerReviewed application/pdf en http://eprints.utm.my/3829/1/RosnitaMuhammad2009_EpitaxialMethodsofQuantumDeviceGrowth.pdf Muhammad, Rosnita and Othaman, Zulkafli and Sakrani, Samsudi and Wahab, Yussof (2009) Epitaxial methods of quantum device growth. Jurnal Fizik UTM, 4 . pp. 1-9. ISSN 0128-8644 |
| spellingShingle | QC Physics Muhammad, Rosnita Othaman, Zulkafli Sakrani, Samsudi Wahab, Yussof Epitaxial methods of quantum device growth |
| title | Epitaxial methods of quantum device growth |
| title_full | Epitaxial methods of quantum device growth |
| title_fullStr | Epitaxial methods of quantum device growth |
| title_full_unstemmed | Epitaxial methods of quantum device growth |
| title_short | Epitaxial methods of quantum device growth |
| title_sort | epitaxial methods of quantum device growth |
| topic | QC Physics |
| url | http://eprints.utm.my/3829/1/RosnitaMuhammad2009_EpitaxialMethodsofQuantumDeviceGrowth.pdf http://eprints.utm.my/3829/ |
| url_provider | http://eprints.utm.my/ |