Die Design Of A Transmitting Transistor In A 175 MHz Power Amplifier At 28V
This paper presents the die design of a NPN transistor, which is targeted for operation in a power amplifier. The proposed die is designed using epitaxial planar bipolar junction technology. The transistor die is designed for operation in the 175MHz frequency range with a 28V biasing. It is capable...
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| Language: | en |
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2004
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| Online Access: | http://eprints.utm.my/2042/1/RajahIsmailRajah2004__DieDesignOfTransmittingTransistor.pdf http://eprints.utm.my/2042/ http://ieeexplore.ieee.org/document/1620864/ |
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| _version_ | 1845470599947747328 |
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| author | Rajah, Prakash Ismail, Razali Rajah, Avinash |
| author2 | Majlis, BY |
| author_facet | Majlis, BY Rajah, Prakash Ismail, Razali Rajah, Avinash |
| author_sort | Rajah, Prakash |
| building | UTM Library |
| collection | Institutional Repository |
| content_provider | Universiti Teknologi Malaysia |
| content_source | UTM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | This paper presents the die design of a NPN transistor, which is targeted for operation in a power amplifier. The proposed die is designed using epitaxial planar bipolar
junction technology. The transistor die is designed for operation in the 175MHz frequency range with a 28V biasing. It is capable of producing a maximum output
power of 4W. It can be utilized in Class A, Class B or Class C power amplifiers meant for transmission purposes such as in mobile communication, industrial communication or military transmitters. The power amplifier is typically placed before the antenna in transmitter systems. It is best to couple the design in a two-stage amplifier to produce a significantly higher-powered signal for transmission. |
| format | Book Section |
| id | my.utm.eprints-2042 |
| institution | Universiti Teknologi Malaysia |
| language | en |
| publishDate | 2004 |
| publisher | IEEE |
| record_format | eprints |
| spelling | my.utm.eprints-20422017-09-06T08:47:08Z http://eprints.utm.my/2042/ Die Design Of A Transmitting Transistor In A 175 MHz Power Amplifier At 28V Rajah, Prakash Ismail, Razali Rajah, Avinash TK Electrical engineering. Electronics Nuclear engineering This paper presents the die design of a NPN transistor, which is targeted for operation in a power amplifier. The proposed die is designed using epitaxial planar bipolar junction technology. The transistor die is designed for operation in the 175MHz frequency range with a 28V biasing. It is capable of producing a maximum output power of 4W. It can be utilized in Class A, Class B or Class C power amplifiers meant for transmission purposes such as in mobile communication, industrial communication or military transmitters. The power amplifier is typically placed before the antenna in transmitter systems. It is best to couple the design in a two-stage amplifier to produce a significantly higher-powered signal for transmission. IEEE Majlis, BY Shaari, S 2004-12-07 Book Section PeerReviewed application/pdf en http://eprints.utm.my/2042/1/RajahIsmailRajah2004__DieDesignOfTransmittingTransistor.pdf Rajah, Prakash and Ismail, Razali and Rajah, Avinash (2004) Die Design Of A Transmitting Transistor In A 175 MHz Power Amplifier At 28V. In: Proceedings 2004 IEEE International Conference on Semiconductor Electronics. IEEE, USA, pp. 175-179. ISBN 0-7803-8658-2 http://ieeexplore.ieee.org/document/1620864/ 10.1109/SMELEC.2004.1620864 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Rajah, Prakash Ismail, Razali Rajah, Avinash Die Design Of A Transmitting Transistor In A 175 MHz Power Amplifier At 28V |
| title | Die Design Of A Transmitting Transistor In A 175 MHz Power Amplifier At 28V |
| title_full | Die Design Of A Transmitting Transistor In A 175 MHz Power Amplifier At 28V |
| title_fullStr | Die Design Of A Transmitting Transistor In A 175 MHz Power Amplifier At 28V |
| title_full_unstemmed | Die Design Of A Transmitting Transistor In A 175 MHz Power Amplifier At 28V |
| title_short | Die Design Of A Transmitting Transistor In A 175 MHz Power Amplifier At 28V |
| title_sort | die design of a transmitting transistor in a 175 mhz power amplifier at 28v |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/2042/1/RajahIsmailRajah2004__DieDesignOfTransmittingTransistor.pdf http://eprints.utm.my/2042/ http://ieeexplore.ieee.org/document/1620864/ |
| url_provider | http://eprints.utm.my/ |