Design approach for tunable CMOS active inductor

A design approach for differential CMOS Active Inductor with a self-resonant frequency around 1.58GHz - 3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of Act...

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Main Authors: Sharman, Rafiq, A'ain, Abu Khari, Azmi, M., Huang, Min Zhe
Format: Conference or Workshop Item
Language:en
Published: 2004
Subjects:
Online Access:http://eprints.utm.my/1891/1/SharmanAbuAzmi2004_DesignApproachForTunableCMOS.pdf
http://eprints.utm.my/1891/
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author Sharman, Rafiq
A'ain, Abu Khari
Azmi, M.
Huang, Min Zhe
author_facet Sharman, Rafiq
A'ain, Abu Khari
Azmi, M.
Huang, Min Zhe
author_sort Sharman, Rafiq
building UTM Library
collection Institutional Repository
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
continent Asia
country Malaysia
description A design approach for differential CMOS Active Inductor with a self-resonant frequency around 1.58GHz - 3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of Active Inductor, only a current source is used. This design has the capability to tune the inductor and Q-factor values from lOnH - 6OnH and 20 - 60 respectively. Furthermore, a new technique is proposed to ensure smaller inductance value can be achieved with smaller power consumption and die area.
format Conference or Workshop Item
id my.utm.eprints-1891
institution Universiti Teknologi Malaysia
language en
publishDate 2004
record_format eprints
spelling my.utm.eprints-18912010-06-01T02:59:20Z http://eprints.utm.my/1891/ Design approach for tunable CMOS active inductor Sharman, Rafiq A'ain, Abu Khari Azmi, M. Huang, Min Zhe TK Electrical engineering. Electronics Nuclear engineering A design approach for differential CMOS Active Inductor with a self-resonant frequency around 1.58GHz - 3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of Active Inductor, only a current source is used. This design has the capability to tune the inductor and Q-factor values from lOnH - 6OnH and 20 - 60 respectively. Furthermore, a new technique is proposed to ensure smaller inductance value can be achieved with smaller power consumption and die area. 2004-12-07 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/1891/1/SharmanAbuAzmi2004_DesignApproachForTunableCMOS.pdf Sharman, Rafiq and A'ain, Abu Khari and Azmi, M. and Huang, Min Zhe (2004) Design approach for tunable CMOS active inductor. In: Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on, 7-9 December 2004, Kuala Lumpur.
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Sharman, Rafiq
A'ain, Abu Khari
Azmi, M.
Huang, Min Zhe
Design approach for tunable CMOS active inductor
title Design approach for tunable CMOS active inductor
title_full Design approach for tunable CMOS active inductor
title_fullStr Design approach for tunable CMOS active inductor
title_full_unstemmed Design approach for tunable CMOS active inductor
title_short Design approach for tunable CMOS active inductor
title_sort design approach for tunable cmos active inductor
topic TK Electrical engineering. Electronics Nuclear engineering
url http://eprints.utm.my/1891/1/SharmanAbuAzmi2004_DesignApproachForTunableCMOS.pdf
http://eprints.utm.my/1891/
url_provider http://eprints.utm.my/