DLTS and C(t) transient study of defects induced by neutron radiation in MOS structures of CCD technology
The aim of this paper is to study neutron irradiation effects on PMOS capacitors and NMOSFETs transistors. The characterization of induced defects was made by capacitance transients C(t) measurements, DLTS spectroscopy, and optical DLTS (ODLTS). DLTS spectra present three peaks (1, 2, and 3) due to...
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Faculty of Science, UTM
2003
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| Online Access: | http://eprints.utm.my/10997/1/HazriBakhtiar2003_DLTSandCtTransientStudy.pdf http://eprints.utm.my/10997/ |
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| author | Ahaitouf, Aziz Bakhtiar, Hazri Losson, Etienne Charles, Jean-Pierre |
| author_facet | Ahaitouf, Aziz Bakhtiar, Hazri Losson, Etienne Charles, Jean-Pierre |
| author_sort | Ahaitouf, Aziz |
| building | UTM Library |
| collection | Institutional Repository |
| content_provider | Universiti Teknologi Malaysia |
| content_source | UTM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | The aim of this paper is to study neutron irradiation effects on PMOS capacitors and NMOSFETs transistors. The characterization of induced defects was made by capacitance transients C(t) measurements, DLTS spectroscopy, and optical DLTS (ODLTS). DLTS spectra present three peaks (1, 2, and 3) due to deep levels created in the semiconductor and two peaks (4 and 5) due to minority carrier generation. Levels 1 and 2 are reported in literature and it was suggested that the level 2 may be due to the divacancy. Two other minority carrier traps have been observed on ODLTS spectra after irradiation. This can explain the decrease of the minority carrier generation lifetime observed in capacitance transients measurements. |
| format | Article |
| id | my.utm.eprints-10997 |
| institution | Universiti Teknologi Malaysia |
| language | en |
| publishDate | 2003 |
| publisher | Faculty of Science, UTM |
| record_format | eprints |
| spelling | my.utm.eprints-109972010-11-19T02:31:53Z http://eprints.utm.my/10997/ DLTS and C(t) transient study of defects induced by neutron radiation in MOS structures of CCD technology Ahaitouf, Aziz Bakhtiar, Hazri Losson, Etienne Charles, Jean-Pierre QC Physics The aim of this paper is to study neutron irradiation effects on PMOS capacitors and NMOSFETs transistors. The characterization of induced defects was made by capacitance transients C(t) measurements, DLTS spectroscopy, and optical DLTS (ODLTS). DLTS spectra present three peaks (1, 2, and 3) due to deep levels created in the semiconductor and two peaks (4 and 5) due to minority carrier generation. Levels 1 and 2 are reported in literature and it was suggested that the level 2 may be due to the divacancy. Two other minority carrier traps have been observed on ODLTS spectra after irradiation. This can explain the decrease of the minority carrier generation lifetime observed in capacitance transients measurements. Faculty of Science, UTM 2003-08 Article PeerReviewed application/pdf en http://eprints.utm.my/10997/1/HazriBakhtiar2003_DLTSandCtTransientStudy.pdf Ahaitouf, Aziz and Bakhtiar, Hazri and Losson, Etienne and Charles, Jean-Pierre (2003) DLTS and C(t) transient study of defects induced by neutron radiation in MOS structures of CCD technology. Jurnal Fizik UTM, 9 (1). pp. 11-20. ISSN 0128-8644 |
| spellingShingle | QC Physics Ahaitouf, Aziz Bakhtiar, Hazri Losson, Etienne Charles, Jean-Pierre DLTS and C(t) transient study of defects induced by neutron radiation in MOS structures of CCD technology |
| title | DLTS and C(t) transient study of defects induced by neutron radiation in MOS structures of CCD technology |
| title_full | DLTS and C(t) transient study of defects induced by neutron radiation in MOS structures of CCD technology |
| title_fullStr | DLTS and C(t) transient study of defects induced by neutron radiation in MOS structures of CCD technology |
| title_full_unstemmed | DLTS and C(t) transient study of defects induced by neutron radiation in MOS structures of CCD technology |
| title_short | DLTS and C(t) transient study of defects induced by neutron radiation in MOS structures of CCD technology |
| title_sort | dlts and c(t) transient study of defects induced by neutron radiation in mos structures of ccd technology |
| topic | QC Physics |
| url | http://eprints.utm.my/10997/1/HazriBakhtiar2003_DLTSandCtTransientStudy.pdf http://eprints.utm.my/10997/ |
| url_provider | http://eprints.utm.my/ |