Gamma ray and neutron radiation effects on the electrical and structural properties of n-ZnO/p-CuGaO2 schottky diode
This research focuses on the radiation tolerance of ZnO and CuGaO2 based semiconductor application for space borne application. In this research, n-ZnO/p-CuGaO2 based semiconductor devices were fabricated and exposed to gamma rays with increasing total ionizing dose (TID) and neutron fluence at diff...
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| Format: | Article |
| Language: | en |
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IOP Publishing
2020
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| Online Access: | http://eprints.uthm.edu.my/6317/1/AJ%202020%20%28276%29.pdf http://eprints.uthm.edu.my/6317/ https://dx.doi.org/10.1149/2162-8777/ab8f19 |
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| author | Mivolil, D. S. Chee, Fuei Pien Rasmidi, Rosfayanti Alias, Afishah Salleh, Saafie Mohd Salleh, Khairul Anuar Jalal Bayar, Abi Muttaqin |
| author_facet | Mivolil, D. S. Chee, Fuei Pien Rasmidi, Rosfayanti Alias, Afishah Salleh, Saafie Mohd Salleh, Khairul Anuar Jalal Bayar, Abi Muttaqin |
| author_sort | Mivolil, D. S. |
| building | UTHM Library |
| collection | Institutional Repository |
| content_provider | Universiti Tun Hussein Onn Malaysia |
| content_source | UTHM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | This research focuses on the radiation tolerance of ZnO and CuGaO2 based semiconductor application for space borne application. In this research, n-ZnO/p-CuGaO2 based semiconductor devices were fabricated and exposed to gamma rays with increasing total ionizing dose (TID) and neutron fluence at different flux. Based on the I-V properties, the decrease in the turn-on voltage of the diode is noticeable with increasing radiation dose for both gamma and neutron flux exposure. The maximum turn-on-voltage of the fabricated diode was shown to be 1.5 V. Exposure towards gamma, shows that the turn-on is increased to 4.7 V at 200 kGy. However, the effect of neutron flux at 6.5 × 1015 n cm−2 shows a small significant effect on the turn on voltage of 1.7 V after irradiation. Results show moderate mitigation towards irradiation, indicating that n-ZnO/p-CuGaO2 thin film is capable of withstanding harsh radiation environment while still retaining its semiconductor as the changes in band gap ranges between 3 eV to 4 eV at post-irradiation. |
| format | Article |
| id | my.uthm.eprints-6317 |
| institution | Universiti Tun Hussein Onn Malaysia |
| language | en |
| publishDate | 2020 |
| publisher | IOP Publishing |
| record_format | eprints |
| spelling | my.uthm.eprints-63172022-01-30T02:45:29Z http://eprints.uthm.edu.my/6317/ Gamma ray and neutron radiation effects on the electrical and structural properties of n-ZnO/p-CuGaO2 schottky diode Mivolil, D. S. Chee, Fuei Pien Rasmidi, Rosfayanti Alias, Afishah Salleh, Saafie Mohd Salleh, Khairul Anuar Jalal Bayar, Abi Muttaqin T Technology (General) TK Electrical engineering. Electronics Nuclear engineering This research focuses on the radiation tolerance of ZnO and CuGaO2 based semiconductor application for space borne application. In this research, n-ZnO/p-CuGaO2 based semiconductor devices were fabricated and exposed to gamma rays with increasing total ionizing dose (TID) and neutron fluence at different flux. Based on the I-V properties, the decrease in the turn-on voltage of the diode is noticeable with increasing radiation dose for both gamma and neutron flux exposure. The maximum turn-on-voltage of the fabricated diode was shown to be 1.5 V. Exposure towards gamma, shows that the turn-on is increased to 4.7 V at 200 kGy. However, the effect of neutron flux at 6.5 × 1015 n cm−2 shows a small significant effect on the turn on voltage of 1.7 V after irradiation. Results show moderate mitigation towards irradiation, indicating that n-ZnO/p-CuGaO2 thin film is capable of withstanding harsh radiation environment while still retaining its semiconductor as the changes in band gap ranges between 3 eV to 4 eV at post-irradiation. IOP Publishing 2020 Article PeerReviewed text en http://eprints.uthm.edu.my/6317/1/AJ%202020%20%28276%29.pdf Mivolil, D. S. and Chee, Fuei Pien and Rasmidi, Rosfayanti and Alias, Afishah and Salleh, Saafie and Mohd Salleh, Khairul Anuar and Jalal Bayar, Abi Muttaqin (2020) Gamma ray and neutron radiation effects on the electrical and structural properties of n-ZnO/p-CuGaO2 schottky diode. ECS Journal of Solid State Science and Technology, 9 (4). pp. 1-9. ISSN 2162-8769 https://dx.doi.org/10.1149/2162-8777/ab8f19 |
| spellingShingle | T Technology (General) TK Electrical engineering. Electronics Nuclear engineering Mivolil, D. S. Chee, Fuei Pien Rasmidi, Rosfayanti Alias, Afishah Salleh, Saafie Mohd Salleh, Khairul Anuar Jalal Bayar, Abi Muttaqin Gamma ray and neutron radiation effects on the electrical and structural properties of n-ZnO/p-CuGaO2 schottky diode |
| title | Gamma ray and neutron radiation effects on the electrical and structural properties of n-ZnO/p-CuGaO2 schottky diode |
| title_full | Gamma ray and neutron radiation effects on the electrical and structural properties of n-ZnO/p-CuGaO2 schottky diode |
| title_fullStr | Gamma ray and neutron radiation effects on the electrical and structural properties of n-ZnO/p-CuGaO2 schottky diode |
| title_full_unstemmed | Gamma ray and neutron radiation effects on the electrical and structural properties of n-ZnO/p-CuGaO2 schottky diode |
| title_short | Gamma ray and neutron radiation effects on the electrical and structural properties of n-ZnO/p-CuGaO2 schottky diode |
| title_sort | gamma ray and neutron radiation effects on the electrical and structural properties of n-zno/p-cugao2 schottky diode |
| topic | T Technology (General) TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.uthm.edu.my/6317/1/AJ%202020%20%28276%29.pdf http://eprints.uthm.edu.my/6317/ https://dx.doi.org/10.1149/2162-8777/ab8f19 |
| url_provider | http://eprints.uthm.edu.my/ |