A comparative study between x-rays and gamma-rays irradiation on electrical characteristics of bipolar junction transistors (BJTS)
Irradiation impact of gamma rays and X-rays on bipolar junction transistors (BJTs) in terms of electronic excitation due to transfer of energy and subsequent ionization, as well as energy transfer to atomic nuclei is studied using in-situ method. Comparison is made on the electrical characteristics...
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American Scientific Publishers
2017
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| Online Access: | http://eprints.uthm.edu.my/3926/ https://doi.org/10.1166/asl.2017.8359 |
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| author | Chee, Fuei Pien Tiwari, Anand Kumar Alias, Afishah Salleh, Saafie Abdul Amir, Haider F. |
| author_facet | Chee, Fuei Pien Tiwari, Anand Kumar Alias, Afishah Salleh, Saafie Abdul Amir, Haider F. |
| author_sort | Chee, Fuei Pien |
| building | UTHM Library |
| collection | Institutional Repository |
| content_provider | Universiti Tun Hussein Onn Malaysia |
| content_source | UTHM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | Irradiation impact of gamma rays and X-rays on bipolar junction transistors (BJTs) in terms of electronic excitation due to transfer of energy and subsequent ionization, as well as energy transfer to atomic nuclei is studied using in-situ method. Comparison is made on the electrical characteristics of the devices under test (DUT) for various collecting current at two different operating mode. Both temporary and permanent damages in DUTs are found to be induced by energy transfer from the irradiation by gamma-rays and X-rays, depending upon total dose absorbed and current drive. Increased probability of recombination, due to creation of electron–hole pairs at the base region is found to be the most significant radiation damage in BJTs, as it leads to decrease in electron flux reaching the collector region. |
| format | Article |
| id | my.uthm.eprints-3926 |
| institution | Universiti Tun Hussein Onn Malaysia |
| publishDate | 2017 |
| publisher | American Scientific Publishers |
| record_format | eprints |
| spelling | my.uthm.eprints-39262021-11-22T07:08:43Z http://eprints.uthm.edu.my/3926/ A comparative study between x-rays and gamma-rays irradiation on electrical characteristics of bipolar junction transistors (BJTS) Chee, Fuei Pien Tiwari, Anand Kumar Alias, Afishah Salleh, Saafie Abdul Amir, Haider F. TK7800-8360 Electronics Irradiation impact of gamma rays and X-rays on bipolar junction transistors (BJTs) in terms of electronic excitation due to transfer of energy and subsequent ionization, as well as energy transfer to atomic nuclei is studied using in-situ method. Comparison is made on the electrical characteristics of the devices under test (DUT) for various collecting current at two different operating mode. Both temporary and permanent damages in DUTs are found to be induced by energy transfer from the irradiation by gamma-rays and X-rays, depending upon total dose absorbed and current drive. Increased probability of recombination, due to creation of electron–hole pairs at the base region is found to be the most significant radiation damage in BJTs, as it leads to decrease in electron flux reaching the collector region. American Scientific Publishers 2017 Article PeerReviewed Chee, Fuei Pien and Tiwari, Anand Kumar and Alias, Afishah and Salleh, Saafie and Abdul Amir, Haider F. (2017) A comparative study between x-rays and gamma-rays irradiation on electrical characteristics of bipolar junction transistors (BJTS). Advanced Science Letters, 23 (2). pp. 1416-1421. ISSN 1936-6612 https://doi.org/10.1166/asl.2017.8359 |
| spellingShingle | TK7800-8360 Electronics Chee, Fuei Pien Tiwari, Anand Kumar Alias, Afishah Salleh, Saafie Abdul Amir, Haider F. A comparative study between x-rays and gamma-rays irradiation on electrical characteristics of bipolar junction transistors (BJTS) |
| title | A comparative study between x-rays and gamma-rays irradiation on electrical characteristics of bipolar junction transistors (BJTS) |
| title_full | A comparative study between x-rays and gamma-rays irradiation on electrical characteristics of bipolar junction transistors (BJTS) |
| title_fullStr | A comparative study between x-rays and gamma-rays irradiation on electrical characteristics of bipolar junction transistors (BJTS) |
| title_full_unstemmed | A comparative study between x-rays and gamma-rays irradiation on electrical characteristics of bipolar junction transistors (BJTS) |
| title_short | A comparative study between x-rays and gamma-rays irradiation on electrical characteristics of bipolar junction transistors (BJTS) |
| title_sort | comparative study between x-rays and gamma-rays irradiation on electrical characteristics of bipolar junction transistors (bjts) |
| topic | TK7800-8360 Electronics |
| url | http://eprints.uthm.edu.my/3926/ https://doi.org/10.1166/asl.2017.8359 |
| url_provider | http://eprints.uthm.edu.my/ |