Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication
Nowadays, semiconductor lighting industry has been developed rapidly throughout the world. Light emitting diodes (LEDs) are known as a compound semiconductor device that can emit visible light when there is an electron current passed through it. In recent years, the group III – nitride semiconducto...
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| Format: | Book Section |
| Language: | en |
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2020
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| Online Access: | http://eprints.uthm.edu.my/2746/1/Ch05.pdf http://eprints.uthm.edu.my/2746/ |
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| author | Lee, Mei Yee Mat Jubadi, Wasuzarina |
| author2 | Mahmud, Farhanahani |
| author_facet | Mahmud, Farhanahani Lee, Mei Yee Mat Jubadi, Wasuzarina |
| author_sort | Lee, Mei Yee |
| building | UTHM Library |
| collection | Institutional Repository |
| content_provider | Universiti Tun Hussein Onn Malaysia |
| content_source | UTHM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | Nowadays, semiconductor lighting industry has been developed rapidly throughout the world. Light emitting diodes (LEDs) are known as a compound semiconductor device that can emit visible light when there is an electron current passed through it. In recent years, the group III – nitride semiconductor compounds with gallium (Ga) have developed as the leading materials for manufacturing energy-efficient LED [1]. The reason of GaN becoming the trend is due to the excellent optical properties and it is able to emit a wide range of wavelengths in the visible spectrum at the efficiency which greater than traditional lighting technologies [2]. The group III – nitride semiconductor compounds are typically grown with wurtzite crystal structure which consists of a large band gap around 1.0 eV to 6.0 eV. |
| format | Book Section |
| id | my.uthm.eprints-2746 |
| institution | Universiti Tun Hussein Onn Malaysia |
| language | en |
| publishDate | 2020 |
| publisher | Penerbit UTHM |
| record_format | eprints |
| spelling | my.uthm.eprints-27462022-01-02T02:27:05Z http://eprints.uthm.edu.my/2746/ Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication Lee, Mei Yee Mat Jubadi, Wasuzarina TK7800-8360 Electronics TK7885-7895 Computer engineering. Computer hardware Nowadays, semiconductor lighting industry has been developed rapidly throughout the world. Light emitting diodes (LEDs) are known as a compound semiconductor device that can emit visible light when there is an electron current passed through it. In recent years, the group III – nitride semiconductor compounds with gallium (Ga) have developed as the leading materials for manufacturing energy-efficient LED [1]. The reason of GaN becoming the trend is due to the excellent optical properties and it is able to emit a wide range of wavelengths in the visible spectrum at the efficiency which greater than traditional lighting technologies [2]. The group III – nitride semiconductor compounds are typically grown with wurtzite crystal structure which consists of a large band gap around 1.0 eV to 6.0 eV. Penerbit UTHM Mahmud, Farhanahani Mazlan, Muhammad Hazli Ruslan, Siti Hawa 2020 Book Section PeerReviewed text en http://eprints.uthm.edu.my/2746/1/Ch05.pdf Lee, Mei Yee and Mat Jubadi, Wasuzarina (2020) Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication. In: Advanced Computer Modelling and Electronics Engineering. Penerbit UTHM, pp. 71-82. ISBN 978-967-2389-92-7 |
| spellingShingle | TK7800-8360 Electronics TK7885-7895 Computer engineering. Computer hardware Lee, Mei Yee Mat Jubadi, Wasuzarina Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication |
| title | Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication |
| title_full | Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication |
| title_fullStr | Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication |
| title_full_unstemmed | Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication |
| title_short | Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication |
| title_sort | influences of ingan quantum well thickness on the internal quantum efficiency for gan led visible light communication |
| topic | TK7800-8360 Electronics TK7885-7895 Computer engineering. Computer hardware |
| url | http://eprints.uthm.edu.my/2746/1/Ch05.pdf http://eprints.uthm.edu.my/2746/ |
| url_provider | http://eprints.uthm.edu.my/ |