A band gap and photoluminescence properties engineering in BaO semiconductor for ultraviolet (UV) photodetector applications: A comprehensive role of co-doping
We report on ultra-violet (UV) photodetectors based on BaO nanoparticles by the detailed investigation of band gap and photoluminescence properties. The BaO nanomaterials were fabricated by the modified sol–gel tech nique. The innovation of co-doping can modulate the photoluminescence or sensing p...
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| Language: | en |
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Elsevier
2024
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| Online Access: | http://eprints.uthm.edu.my/12359/1/J17804_de971e2c7df2e1ed322d79f80561b047.pdf http://eprints.uthm.edu.my/12359/ https://doi.org/10.1016/j.jcis.2024.05.107 |
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| author | Saleem, Shahroz Jameel, Muhammad Hasnain Yasin, Aqeela Mayzan, Mohd Zul Hilmi Ullah, Arif Althubeiti, Khaled Aljohani, Mohammed Bashir, Jamshid |
| author_facet | Saleem, Shahroz Jameel, Muhammad Hasnain Yasin, Aqeela Mayzan, Mohd Zul Hilmi Ullah, Arif Althubeiti, Khaled Aljohani, Mohammed Bashir, Jamshid |
| author_sort | Saleem, Shahroz |
| building | UTHM Library |
| collection | Institutional Repository |
| content_provider | Universiti Tun Hussein Onn Malaysia |
| content_source | UTHM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | We report on ultra-violet (UV) photodetectors based on BaO nanoparticles by the detailed investigation of band
gap and photoluminescence properties. The BaO nanomaterials were fabricated by the modified sol–gel tech
nique. The innovation of co-doping can modulate the photoluminescence or sensing properties by narrowing the
band gap related to enhancing the high carrier concentration, higher electronic lifetime, and low carriers recombination. It is investigated that the BaO nanoparticles with co-doping reveals a highly reduced band gap and exceptional photoluminescence properties as compared to the pristine BaO nanoparticles due to hindering carrier, s recombination for Ultra-violet (UV) photodetectors. The optical studies revealed that the addition of co-dopants in BaO host material creates new energy sites, so the band gap declines up to 1.31 eV as compared to that of pristine BaO (1.36 eV). The photoluminescence properties recorded with photoluminescence (PL) spectros copy were recorded which revealed the decrease in PL intensity due to the hindering of carriers recombination with the addition of co-dopant metal ions. Furthermore, the inclusion of co-dopant metals results in an improvement in electrical conductivity because of a decline in carrier recombination, according to an I-V
characteristic study. This factor contributes to enhance the photoluminescence properties of BaO which, in turn,
contributes to enhance the sensing capability of the photodetector device. These obtained features modify op
toelectronic properties are far superior as compared to that of previously reported literature on BaO nano materials, and the synthesized BaO semiconductor material becomes a potential candidate for efficient use in the ultraviolet (UV) photodetectors device applications. |
| format | Article |
| id | my.uthm.eprints-12359 |
| institution | Universiti Tun Hussein Onn Malaysia |
| language | en |
| publishDate | 2024 |
| publisher | Elsevier |
| record_format | eprints |
| spelling | my.uthm.eprints-123592025-05-05T04:52:26Z http://eprints.uthm.edu.my/12359/ A band gap and photoluminescence properties engineering in BaO semiconductor for ultraviolet (UV) photodetector applications: A comprehensive role of co-doping Saleem, Shahroz Jameel, Muhammad Hasnain Yasin, Aqeela Mayzan, Mohd Zul Hilmi Ullah, Arif Althubeiti, Khaled Aljohani, Mohammed Bashir, Jamshid QC Physics We report on ultra-violet (UV) photodetectors based on BaO nanoparticles by the detailed investigation of band gap and photoluminescence properties. The BaO nanomaterials were fabricated by the modified sol–gel tech nique. The innovation of co-doping can modulate the photoluminescence or sensing properties by narrowing the band gap related to enhancing the high carrier concentration, higher electronic lifetime, and low carriers recombination. It is investigated that the BaO nanoparticles with co-doping reveals a highly reduced band gap and exceptional photoluminescence properties as compared to the pristine BaO nanoparticles due to hindering carrier, s recombination for Ultra-violet (UV) photodetectors. The optical studies revealed that the addition of co-dopants in BaO host material creates new energy sites, so the band gap declines up to 1.31 eV as compared to that of pristine BaO (1.36 eV). The photoluminescence properties recorded with photoluminescence (PL) spectros copy were recorded which revealed the decrease in PL intensity due to the hindering of carriers recombination with the addition of co-dopant metal ions. Furthermore, the inclusion of co-dopant metals results in an improvement in electrical conductivity because of a decline in carrier recombination, according to an I-V characteristic study. This factor contributes to enhance the photoluminescence properties of BaO which, in turn, contributes to enhance the sensing capability of the photodetector device. These obtained features modify op toelectronic properties are far superior as compared to that of previously reported literature on BaO nano materials, and the synthesized BaO semiconductor material becomes a potential candidate for efficient use in the ultraviolet (UV) photodetectors device applications. Elsevier 2024 Article PeerReviewed text en http://eprints.uthm.edu.my/12359/1/J17804_de971e2c7df2e1ed322d79f80561b047.pdf Saleem, Shahroz and Jameel, Muhammad Hasnain and Yasin, Aqeela and Mayzan, Mohd Zul Hilmi and Ullah, Arif and Althubeiti, Khaled and Aljohani, Mohammed and Bashir, Jamshid (2024) A band gap and photoluminescence properties engineering in BaO semiconductor for ultraviolet (UV) photodetector applications: A comprehensive role of co-doping. Journal of Colloid And Interface Science, 670. pp. 599-616. https://doi.org/10.1016/j.jcis.2024.05.107 |
| spellingShingle | QC Physics Saleem, Shahroz Jameel, Muhammad Hasnain Yasin, Aqeela Mayzan, Mohd Zul Hilmi Ullah, Arif Althubeiti, Khaled Aljohani, Mohammed Bashir, Jamshid A band gap and photoluminescence properties engineering in BaO semiconductor for ultraviolet (UV) photodetector applications: A comprehensive role of co-doping |
| title | A band gap and photoluminescence properties engineering in BaO semiconductor for ultraviolet (UV) photodetector applications: A comprehensive role of co-doping |
| title_full | A band gap and photoluminescence properties engineering in BaO semiconductor for ultraviolet (UV) photodetector applications: A comprehensive role of co-doping |
| title_fullStr | A band gap and photoluminescence properties engineering in BaO semiconductor for ultraviolet (UV) photodetector applications: A comprehensive role of co-doping |
| title_full_unstemmed | A band gap and photoluminescence properties engineering in BaO semiconductor for ultraviolet (UV) photodetector applications: A comprehensive role of co-doping |
| title_short | A band gap and photoluminescence properties engineering in BaO semiconductor for ultraviolet (UV) photodetector applications: A comprehensive role of co-doping |
| title_sort | band gap and photoluminescence properties engineering in bao semiconductor for ultraviolet (uv) photodetector applications: a comprehensive role of co-doping |
| topic | QC Physics |
| url | http://eprints.uthm.edu.my/12359/1/J17804_de971e2c7df2e1ed322d79f80561b047.pdf http://eprints.uthm.edu.my/12359/ https://doi.org/10.1016/j.jcis.2024.05.107 |
| url_provider | http://eprints.uthm.edu.my/ |