Microstructural and mechanical analysis of Cu and Au interconnect on various bond pads

Effects of High Temperature Storage (HTS) and bonding toward microstructure change of intermetallic compound (IMC) at the wire bonding interface of 3 types of bond pad (Al, AlSiCu and NiPdAu) were presented in this paper. Optical and electron microscope analyses revealed that the IMC growth rate of...

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Main Authors: Thangaraj, Joseph Sahaya Anand, Chua, Kok Yau, Yeow, See Leong, Lim, Weng Keat, Hng, May Ting
Format: Article
Language:en
Published: Elsevier 2013
Subjects:
Online Access:http://eprints.utem.edu.my/id/eprint/9145/1/30_CAP_13.pdf
http://eprints.utem.edu.my/id/eprint/9145/
http://www.journals.elsevier.com/current-applied-physics
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author Thangaraj, Joseph Sahaya Anand
Chua, Kok Yau
Yeow, See Leong
Lim, Weng Keat
Hng, May Ting
author_facet Thangaraj, Joseph Sahaya Anand
Chua, Kok Yau
Yeow, See Leong
Lim, Weng Keat
Hng, May Ting
author_sort Thangaraj, Joseph Sahaya Anand
building UTEM Library
collection Institutional Repository
content_provider Universiti Teknikal Malaysia Melaka
content_source UTEM Institutional Repository
continent Asia
country Malaysia
description Effects of High Temperature Storage (HTS) and bonding toward microstructure change of intermetallic compound (IMC) at the wire bonding interface of 3 types of bond pad (Al, AlSiCu and NiPdAu) were presented in this paper. Optical and electron microscope analyses revealed that the IMC growth rate of samples under 175 and 200 �C HTS increased in the order of Al > AlSiCu > NiPdAu. Besides, higher HTS and bonding temperatures also promoted higher IMC thickness. The compositional study showed that higher HTS and bonding temperature developed rapid interdiffusion in bonding interface. In the mechanical ball shear test, a decrease of the shear force of Al and AlSiCu bond pads after 500 h HTS was believed due to poorly developed IMC at bonding interface. On the other hand, shear force degradation at 1000 h was due to excessive growth of IMC that in turn causes the formation of defects. For NiPdAu bond pad, increasing trend of shear force with HTS duration at 175 �C implied a good reliability of the Cu wire bonding. The rapid microscopic inspection on Cu wired Al bond pad under HTS 175 �C showed the IMC development from the periphery to the center of the ball bond. However, after 500 h voids started to develop until the crack was observed at 1000 h.
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spelling my.utem.eprints-91452023-05-24T16:32:20Z http://eprints.utem.edu.my/id/eprint/9145/ Microstructural and mechanical analysis of Cu and Au interconnect on various bond pads Thangaraj, Joseph Sahaya Anand Chua, Kok Yau Yeow, See Leong Lim, Weng Keat Hng, May Ting TJ Mechanical engineering and machinery Effects of High Temperature Storage (HTS) and bonding toward microstructure change of intermetallic compound (IMC) at the wire bonding interface of 3 types of bond pad (Al, AlSiCu and NiPdAu) were presented in this paper. Optical and electron microscope analyses revealed that the IMC growth rate of samples under 175 and 200 �C HTS increased in the order of Al > AlSiCu > NiPdAu. Besides, higher HTS and bonding temperatures also promoted higher IMC thickness. The compositional study showed that higher HTS and bonding temperature developed rapid interdiffusion in bonding interface. In the mechanical ball shear test, a decrease of the shear force of Al and AlSiCu bond pads after 500 h HTS was believed due to poorly developed IMC at bonding interface. On the other hand, shear force degradation at 1000 h was due to excessive growth of IMC that in turn causes the formation of defects. For NiPdAu bond pad, increasing trend of shear force with HTS duration at 175 �C implied a good reliability of the Cu wire bonding. The rapid microscopic inspection on Cu wired Al bond pad under HTS 175 �C showed the IMC development from the periphery to the center of the ball bond. However, after 500 h voids started to develop until the crack was observed at 1000 h. Elsevier 2013-10 Article PeerReviewed text en http://eprints.utem.edu.my/id/eprint/9145/1/30_CAP_13.pdf Thangaraj, Joseph Sahaya Anand and Chua, Kok Yau and Yeow, See Leong and Lim, Weng Keat and Hng, May Ting (2013) Microstructural and mechanical analysis of Cu and Au interconnect on various bond pads. Current Applied Physics, 13 (8). pp. 1674-1683. ISSN 1567-1739 http://www.journals.elsevier.com/current-applied-physics
spellingShingle TJ Mechanical engineering and machinery
Thangaraj, Joseph Sahaya Anand
Chua, Kok Yau
Yeow, See Leong
Lim, Weng Keat
Hng, May Ting
Microstructural and mechanical analysis of Cu and Au interconnect on various bond pads
title Microstructural and mechanical analysis of Cu and Au interconnect on various bond pads
title_full Microstructural and mechanical analysis of Cu and Au interconnect on various bond pads
title_fullStr Microstructural and mechanical analysis of Cu and Au interconnect on various bond pads
title_full_unstemmed Microstructural and mechanical analysis of Cu and Au interconnect on various bond pads
title_short Microstructural and mechanical analysis of Cu and Au interconnect on various bond pads
title_sort microstructural and mechanical analysis of cu and au interconnect on various bond pads
topic TJ Mechanical engineering and machinery
url http://eprints.utem.edu.my/id/eprint/9145/1/30_CAP_13.pdf
http://eprints.utem.edu.my/id/eprint/9145/
http://www.journals.elsevier.com/current-applied-physics
url_provider http://eprints.utem.edu.my/