Process and Characterization of Strained Silicon MOSFET Incorporating Dielectric Pocket (SDP-MOSFET)

In this paper, we propose a fabrication process of Strained Silicon MOSFET incorporating Dielectric Pocket (SDP-MOSFET). By employing TCAD tools, a systematic process simulation in realizing the SDP-MOSFET structure is done successfully. By using vertical and horizontal doping profiles, 120 nm...

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Bibliographic Details

Main Authors:	Mohammed Napiah, Zul Atfyi Fauzan, Idris, Muhammad Idzdihar, Mohd Said, Muzalifah, Abdul Hamid, Afifah Maheran, Ali, Nur Alisa, Hamzah, Rostam Affendi
Format:	Conference or Workshop Item
Language:	en
Published:	2011
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utem.edu.my/id/eprint/8535/1/012._1569455953.pdf http://eprints.utem.edu.my/id/eprint/8535/
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