NMOS Performance of Low Boron Activation on Group V for Ultra-Shallow Junction Formation
Fabrication of ultra shallow junctions with low contact resistances is desired to advance current CMOS technology. The low Boron activation on Group V for ultra shallow junction formation will makes the chip fabrication works effectively. Silvaco TCAD (Technology Computer Aided Design)manages simula...
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| Format: | Article |
| Language: | en |
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Trans Tech Publications
2013
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| Online Access: | http://eprints.utem.edu.my/id/eprint/8518/1/AMR.716.248.pdf http://eprints.utem.edu.my/id/eprint/8518/ |
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| author | Mohd Said, Muzalifah Mohammed Napiah, Zul Atfyi Fauzan Arith, Faiz Mohd Noh, Zarina |
| author_facet | Mohd Said, Muzalifah Mohammed Napiah, Zul Atfyi Fauzan Arith, Faiz Mohd Noh, Zarina |
| author_sort | Mohd Said, Muzalifah |
| building | UTEM Library |
| collection | Institutional Repository |
| content_provider | Universiti Teknikal Malaysia Melaka |
| content_source | UTEM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | Fabrication of ultra shallow junctions with low contact resistances is desired to advance current CMOS technology. The low Boron activation on Group V for ultra shallow junction formation will makes the chip fabrication works effectively. Silvaco TCAD (Technology Computer Aided Design)manages simulation tasks and analyzing simulation results when ultra-shallow junction formation is using low-boron activation on Phosphorus, Antimony and Arsenic. A stimulate process like implantation, diffusion and dopant activation and epitaxial growth in different semiconductor materials has been analyzed as well as investigate the effects of energy of boron ion beams on ultra shallow junction formation. As a result, the electrical characteristics of NMOS structure by obtaining graph of ID – VGS and ID – VDS has been studied when there are variations in junction length (Xj), and gatelength (Lg). |
| format | Article |
| id | my.utem.eprints-8518 |
| institution | Universiti Teknikal Malaysia Melaka |
| language | en |
| publishDate | 2013 |
| publisher | Trans Tech Publications |
| record_format | eprints |
| spelling | my.utem.eprints-85182015-05-28T03:57:11Z http://eprints.utem.edu.my/id/eprint/8518/ NMOS Performance of Low Boron Activation on Group V for Ultra-Shallow Junction Formation Mohd Said, Muzalifah Mohammed Napiah, Zul Atfyi Fauzan Arith, Faiz Mohd Noh, Zarina TK Electrical engineering. Electronics Nuclear engineering Fabrication of ultra shallow junctions with low contact resistances is desired to advance current CMOS technology. The low Boron activation on Group V for ultra shallow junction formation will makes the chip fabrication works effectively. Silvaco TCAD (Technology Computer Aided Design)manages simulation tasks and analyzing simulation results when ultra-shallow junction formation is using low-boron activation on Phosphorus, Antimony and Arsenic. A stimulate process like implantation, diffusion and dopant activation and epitaxial growth in different semiconductor materials has been analyzed as well as investigate the effects of energy of boron ion beams on ultra shallow junction formation. As a result, the electrical characteristics of NMOS structure by obtaining graph of ID – VGS and ID – VDS has been studied when there are variations in junction length (Xj), and gatelength (Lg). Trans Tech Publications 2013 Article PeerReviewed application/pdf en http://eprints.utem.edu.my/id/eprint/8518/1/AMR.716.248.pdf Mohd Said, Muzalifah and Mohammed Napiah, Zul Atfyi Fauzan and Arith, Faiz and Mohd Noh, Zarina (2013) NMOS Performance of Low Boron Activation on Group V for Ultra-Shallow Junction Formation. Advanced Materials Research. pp. 248-253. ISSN 10226680 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Mohd Said, Muzalifah Mohammed Napiah, Zul Atfyi Fauzan Arith, Faiz Mohd Noh, Zarina NMOS Performance of Low Boron Activation on Group V for Ultra-Shallow Junction Formation |
| title | NMOS Performance of Low Boron Activation on Group V for Ultra-Shallow Junction Formation |
| title_full | NMOS Performance of Low Boron Activation on Group V for Ultra-Shallow Junction Formation |
| title_fullStr | NMOS Performance of Low Boron Activation on Group V for Ultra-Shallow Junction Formation |
| title_full_unstemmed | NMOS Performance of Low Boron Activation on Group V for Ultra-Shallow Junction Formation |
| title_short | NMOS Performance of Low Boron Activation on Group V for Ultra-Shallow Junction Formation |
| title_sort | nmos performance of low boron activation on group v for ultra-shallow junction formation |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utem.edu.my/id/eprint/8518/1/AMR.716.248.pdf http://eprints.utem.edu.my/id/eprint/8518/ |
| url_provider | http://eprints.utem.edu.my/ |