I-V Characteristic at Different Depletion Region for CMOS PN Photodiode for Optical Communication Applications
In this paper, CMOS PN photodiode will be design and analyze for the application at 5GHz optical communication. The paper will be divided in several section; the theory of CMOS PN photodiode and design with analysis of IV characteristics of PN photodiode. A better understanding of the operatio...
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| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | en |
| Published: |
2012
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| Subjects: | |
| Online Access: | http://eprints.utem.edu.my/id/eprint/6885/1/Yat_PN_ICDV2012_30.pdf http://eprints.utem.edu.my/id/eprint/6885/ |
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| Summary: | In this paper, CMOS PN photodiode will be design and analyze for the application at 5GHz optical
communication. The paper will be divided in several section; the theory of CMOS PN photodiode and design with
analysis of IV characteristics of PN photodiode. A better understanding of the operation will be investigated through
this. The PN photodiode will be design using Silvaco TCAD and will be characterize and experimental in IV
Characteristic. The effects of IV characteristic will be analyzed in term of changes the width and light. Further
understanding of IV characteristic will be presents in this paper.
Keyword - PN photodiode, IV Characteristic, Silvaco TCAD. |
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