An Investigation on I-V Characteristic for CMOS PIN Photodiode: Variable I-Layer
In this paper presented an investigation on I-V characteristic for CMOS PIN Photodiode. PIN diodes are widely used in optics and microwave circuits as it acts as a current controlled resistor at these frequencies. PIN diode performance is greatly influenced by the geometrical size of the device,...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | en |
| Published: |
2012
|
| Subjects: | |
| Online Access: | http://eprints.utem.edu.my/id/eprint/6884/1/Yash_PIN_ICDV2012_28.pdf http://eprints.utem.edu.my/id/eprint/6884/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832716215375626240 |
|---|---|
| author | Othman, Mohd Azlishah Mohammed Napiah, Zul Atfyi Fauzan Ismail, Mohd Muzafar Sulaiman, Hamzah Asyrani Misran, Mohamad Harris Meor Said, Maizatul Alice |
| author_facet | Othman, Mohd Azlishah Mohammed Napiah, Zul Atfyi Fauzan Ismail, Mohd Muzafar Sulaiman, Hamzah Asyrani Misran, Mohamad Harris Meor Said, Maizatul Alice |
| author_sort | Othman, Mohd Azlishah |
| building | UTEM Library |
| collection | Institutional Repository |
| content_provider | Universiti Teknikal Malaysia Melaka |
| content_source | UTEM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | In this paper presented an investigation on I-V characteristic for CMOS PIN Photodiode. PIN diodes are
widely used in optics and microwave circuits as it acts as a current controlled resistor at these frequencies. PIN diode
performance is greatly influenced by the geometrical size of the device, especially in the intrinsic region. Two different
I-layer thickness of PIN diode structure has been designed using Sentaurus Technology Computer Aided Design
(TCAD) tools. The I-layer thickness (or width) is varied from 4 µm to 8 µm in order to investigate its effects on the
current-voltage (I-V) characteristics. These structures were design based on CMOS process.
Keyword - PIN Photodiode, Silvaco TCAD, IV Characteristic, Reverse Bias. |
| format | Conference or Workshop Item |
| id | my.utem.eprints-6884 |
| institution | Universiti Teknikal Malaysia Melaka |
| language | en |
| publishDate | 2012 |
| record_format | eprints |
| spelling | my.utem.eprints-68842015-05-28T03:45:47Z http://eprints.utem.edu.my/id/eprint/6884/ An Investigation on I-V Characteristic for CMOS PIN Photodiode: Variable I-Layer Othman, Mohd Azlishah Mohammed Napiah, Zul Atfyi Fauzan Ismail, Mohd Muzafar Sulaiman, Hamzah Asyrani Misran, Mohamad Harris Meor Said, Maizatul Alice TK Electrical engineering. Electronics Nuclear engineering In this paper presented an investigation on I-V characteristic for CMOS PIN Photodiode. PIN diodes are widely used in optics and microwave circuits as it acts as a current controlled resistor at these frequencies. PIN diode performance is greatly influenced by the geometrical size of the device, especially in the intrinsic region. Two different I-layer thickness of PIN diode structure has been designed using Sentaurus Technology Computer Aided Design (TCAD) tools. The I-layer thickness (or width) is varied from 4 µm to 8 µm in order to investigate its effects on the current-voltage (I-V) characteristics. These structures were design based on CMOS process. Keyword - PIN Photodiode, Silvaco TCAD, IV Characteristic, Reverse Bias. 2012-08 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utem.edu.my/id/eprint/6884/1/Yash_PIN_ICDV2012_28.pdf Othman, Mohd Azlishah and Mohammed Napiah, Zul Atfyi Fauzan and Ismail, Mohd Muzafar and Sulaiman, Hamzah Asyrani and Misran, Mohamad Harris and Meor Said, Maizatul Alice (2012) An Investigation on I-V Characteristic for CMOS PIN Photodiode: Variable I-Layer. In: The 3rd International Conference on Integrated Circuits and Devices in Vietnam (ICDV 2012), August 13-15, 2012, Danang, Vietnam. |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Othman, Mohd Azlishah Mohammed Napiah, Zul Atfyi Fauzan Ismail, Mohd Muzafar Sulaiman, Hamzah Asyrani Misran, Mohamad Harris Meor Said, Maizatul Alice An Investigation on I-V Characteristic for CMOS PIN Photodiode: Variable I-Layer |
| title | An Investigation on I-V Characteristic for CMOS PIN Photodiode: Variable I-Layer |
| title_full | An Investigation on I-V Characteristic for CMOS PIN Photodiode: Variable I-Layer |
| title_fullStr | An Investigation on I-V Characteristic for CMOS PIN Photodiode: Variable I-Layer |
| title_full_unstemmed | An Investigation on I-V Characteristic for CMOS PIN Photodiode: Variable I-Layer |
| title_short | An Investigation on I-V Characteristic for CMOS PIN Photodiode: Variable I-Layer |
| title_sort | investigation on i-v characteristic for cmos pin photodiode: variable i-layer |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utem.edu.my/id/eprint/6884/1/Yash_PIN_ICDV2012_28.pdf http://eprints.utem.edu.my/id/eprint/6884/ |
| url_provider | http://eprints.utem.edu.my/ |