An Investigation on I-V Characteristic for CMOS PIN Photodiode: Variable I-Layer
In this paper presented an investigation on I-V characteristic for CMOS PIN Photodiode. PIN diodes are widely used in optics and microwave circuits as it acts as a current controlled resistor at these frequencies. PIN diode performance is greatly influenced by the geometrical size of the device,...
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| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | en |
| Published: |
2012
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| Subjects: | |
| Online Access: | http://eprints.utem.edu.my/id/eprint/6884/1/Yash_PIN_ICDV2012_28.pdf http://eprints.utem.edu.my/id/eprint/6884/ |
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| Summary: | In this paper presented an investigation on I-V characteristic for CMOS PIN Photodiode. PIN diodes are
widely used in optics and microwave circuits as it acts as a current controlled resistor at these frequencies. PIN diode
performance is greatly influenced by the geometrical size of the device, especially in the intrinsic region. Two different
I-layer thickness of PIN diode structure has been designed using Sentaurus Technology Computer Aided Design
(TCAD) tools. The I-layer thickness (or width) is varied from 4 µm to 8 µm in order to investigate its effects on the
current-voltage (I-V) characteristics. These structures were design based on CMOS process.
Keyword - PIN Photodiode, Silvaco TCAD, IV Characteristic, Reverse Bias. |
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