Design and Fabrication of Radio Frequency Amplifier with 3 dB π-Network Attenuator Isolation
This paper presents the design and fabrication of radio frequency amplifier (RFA), which operates at 5.8 GHz unlicensed frequency for WiMAX application. The RFA designed used T-matching network consisting of lump reactive elements, 3 dB attenuator and microstrip line at the input and output impedanc...
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| Format: | Conference or Workshop Item |
| Language: | en |
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2012
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| Online Access: | http://eprints.utem.edu.my/id/eprint/6821/1/1569634165.pdf http://eprints.utem.edu.my/id/eprint/6821/ http://www.utem.edu.my/apace2012/index.php?option=com_content&view=article&id=26&Itemid=25 |
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| author | Othman, A.R Ibrahim , A.B Husain, M.N Johal , M.S A.Rashid , K.A Saad, M.M |
| author_facet | Othman, A.R Ibrahim , A.B Husain, M.N Johal , M.S A.Rashid , K.A Saad, M.M |
| author_sort | Othman, A.R |
| building | UTEM Library |
| collection | Institutional Repository |
| content_provider | Universiti Teknikal Malaysia Melaka |
| content_source | UTEM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | This paper presents the design and fabrication of radio frequency amplifier (RFA), which operates at 5.8 GHz unlicensed frequency for WiMAX application. The RFA designed used T-matching network consisting of lump reactive elements, 3 dB attenuator and microstrip line at the input and output impedance. The RFA developed in this project contribute a gain of 15.6 dB with overall noise figure of 2.4 dB. The overall measured bandwidth is 1.240 GHz with S parameters S11, S12 and S22 measured are -12.4 dB, -25.5 dB and -12.3 dB respectively. The isolation result shows that there is a significant contribution using 3 dB π-network. The RFA used FET transistor EPA018A from Excelics Semiconductor Inc. |
| format | Conference or Workshop Item |
| id | my.utem.eprints-6821 |
| institution | Universiti Teknikal Malaysia Melaka |
| language | en |
| publishDate | 2012 |
| record_format | eprints |
| spelling | my.utem.eprints-68212015-05-28T03:45:25Z http://eprints.utem.edu.my/id/eprint/6821/ Design and Fabrication of Radio Frequency Amplifier with 3 dB π-Network Attenuator Isolation Othman, A.R Ibrahim , A.B Husain, M.N Johal , M.S A.Rashid , K.A Saad, M.M Q Science (General) This paper presents the design and fabrication of radio frequency amplifier (RFA), which operates at 5.8 GHz unlicensed frequency for WiMAX application. The RFA designed used T-matching network consisting of lump reactive elements, 3 dB attenuator and microstrip line at the input and output impedance. The RFA developed in this project contribute a gain of 15.6 dB with overall noise figure of 2.4 dB. The overall measured bandwidth is 1.240 GHz with S parameters S11, S12 and S22 measured are -12.4 dB, -25.5 dB and -12.3 dB respectively. The isolation result shows that there is a significant contribution using 3 dB π-network. The RFA used FET transistor EPA018A from Excelics Semiconductor Inc. 2012-12-11 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utem.edu.my/id/eprint/6821/1/1569634165.pdf Othman, A.R and Ibrahim , A.B and Husain, M.N and Johal , M.S and A.Rashid , K.A and Saad, M.M (2012) Design and Fabrication of Radio Frequency Amplifier with 3 dB π-Network Attenuator Isolation. In: 2012 IEEE Asia-Pacific Conference on Applied Electromagnetics (APACE 2012), 11-13 December 2012, Melaka. http://www.utem.edu.my/apace2012/index.php?option=com_content&view=article&id=26&Itemid=25 |
| spellingShingle | Q Science (General) Othman, A.R Ibrahim , A.B Husain, M.N Johal , M.S A.Rashid , K.A Saad, M.M Design and Fabrication of Radio Frequency Amplifier with 3 dB π-Network Attenuator Isolation |
| title | Design and Fabrication of Radio Frequency Amplifier with 3 dB π-Network Attenuator Isolation |
| title_full | Design and Fabrication of Radio Frequency Amplifier with 3 dB π-Network Attenuator Isolation |
| title_fullStr | Design and Fabrication of Radio Frequency Amplifier with 3 dB π-Network Attenuator Isolation |
| title_full_unstemmed | Design and Fabrication of Radio Frequency Amplifier with 3 dB π-Network Attenuator Isolation |
| title_short | Design and Fabrication of Radio Frequency Amplifier with 3 dB π-Network Attenuator Isolation |
| title_sort | design and fabrication of radio frequency amplifier with 3 db π-network attenuator isolation |
| topic | Q Science (General) |
| url | http://eprints.utem.edu.my/id/eprint/6821/1/1569634165.pdf http://eprints.utem.edu.my/id/eprint/6821/ http://www.utem.edu.my/apace2012/index.php?option=com_content&view=article&id=26&Itemid=25 |
| url_provider | http://eprints.utem.edu.my/ |