Fabrication of transparent ITO/GTO bilayer diode thin films
Transparent diodes were fabricated by layering a Ga–Sn–O (GTO) film onto an In2O3:Sn (ITO) film using a facing-targeted DC sputtering method. When a GTO film containing∼25 mol% Ga was deposited on the surface of the conductive ITO film at room temperature, a diode bilayer film was obtained. The bila...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | en |
| Published: |
World Scientific Publishing Co Pte Ltd
2023
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| Online Access: | http://eprints.utem.edu.my/id/eprint/27208/2/0170016062023227.PDF http://eprints.utem.edu.my/id/eprint/27208/ https://worldscientific.com/doi/10.1142/S0217984923400390 |
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| Summary: | Transparent diodes were fabricated by layering a Ga–Sn–O (GTO) film onto an In2O3:Sn (ITO) film using a facing-targeted DC sputtering method. When a GTO film containing∼25 mol% Ga was deposited on the surface of the conductive ITO film at room temperature, a diode bilayer film was obtained. The bilayer film exhibited rectification characteristics of approximately 0 and 3.8 µA/V when negative and positive voltages were applied, respectively. However, the rectification characteristics increased up to 68.3 µA/V in the positive voltage applied region after annealed at 200◦C. |
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