Design And Characterization Of 20nm SOI MOSFET Doping Abruptness Dependent

SOI MOSFET has currently become a trend for low power devices such as palmtops, cell phone, and other devices because it has a lot of advantage in terms of speed, density, and performance gain. Various efforts have been done to continue the progress in shrinking dimensions and higher-frequency perfo...

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Bibliographic Details

Main Authors:	Anis Suhaila, Mohd Zain, Nor Fatihah, Mohd Zain, Fauziyah, Salehuddin, N., Jamaluddin, N., Abdullah Yaacob
Format:	Article
Language:	en
Published:	Asian Research Publishing Network (ARPN) 2016
Subjects:	T Technology (General)
Online Access:	http://eprints.utem.edu.my/id/eprint/17140/1/Design%20And%20Characterization%20Of%2020nm%20SOI%20MOSFET%20Doping%20Abruptness%20Dependent.pdf http://eprints.utem.edu.my/id/eprint/17140/ http://www.arpnjournals.org/jeas/research_papers/rp_2016/jeas_0516_4277.pdf
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