Design consideration of N-drift region doping concentration in high voltage VDMOS transistor
N-drift doping concentration has important contribution in determining the breakdown voltage and on-resistance of the device. It should be well considered because higher N- drift doping concentration can minimize the on-resistance of the device, but also lowering breakdown voltage of the device...
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| Format: | Article |
| Language: | en |
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2014
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| Online Access: | http://eprints.utem.edu.my/id/eprint/14005/1/Design_Consideration_of_N-Drift_Region_Doping_Concentration_in_High_Voltage_VDMOS_Transistor.pdf http://eprints.utem.edu.my/id/eprint/14005/ http://www.ijsret.org/ |
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| author | Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof Wijaya Bayu Murti, Wijaya Bayu Murti Norhayati binti Soin, N.Soin |
| author_facet | Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof Wijaya Bayu Murti, Wijaya Bayu Murti Norhayati binti Soin, N.Soin |
| author_sort | Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof |
| building | UTEM Library |
| collection | Institutional Repository |
| content_provider | Universiti Teknikal Malaysia Melaka |
| content_source | UTEM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | N-drift doping concentration has important contribution
in determining the breakdown voltage and on-resistance
of the device. It should be well considered because
higher N- drift doping concentration can minimize the
on-resistance of the device, but also lowering breakdown
voltage of the device that expected to be high. It also has
a proportional relationship with threshold voltage degradation caused by hot carrier injection. So the
variation of N-drift doping concentration can be used to
optimize the VDMOS transistor performance. |
| format | Article |
| id | my.utem.eprints-14005 |
| institution | Universiti Teknikal Malaysia Melaka |
| language | en |
| publishDate | 2014 |
| record_format | eprints |
| spelling | my.utem.eprints-140052015-05-28T04:35:32Z http://eprints.utem.edu.my/id/eprint/14005/ Design consideration of N-drift region doping concentration in high voltage VDMOS transistor Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof Wijaya Bayu Murti, Wijaya Bayu Murti Norhayati binti Soin, N.Soin TK Electrical engineering. Electronics Nuclear engineering N-drift doping concentration has important contribution in determining the breakdown voltage and on-resistance of the device. It should be well considered because higher N- drift doping concentration can minimize the on-resistance of the device, but also lowering breakdown voltage of the device that expected to be high. It also has a proportional relationship with threshold voltage degradation caused by hot carrier injection. So the variation of N-drift doping concentration can be used to optimize the VDMOS transistor performance. 2014-07 Article NonPeerReviewed application/pdf en http://eprints.utem.edu.my/id/eprint/14005/1/Design_Consideration_of_N-Drift_Region_Doping_Concentration_in_High_Voltage_VDMOS_Transistor.pdf Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof and Wijaya Bayu Murti, Wijaya Bayu Murti and Norhayati binti Soin, N.Soin (2014) Design consideration of N-drift region doping concentration in high voltage VDMOS transistor. International Journal of Scientific Research Engineering & Technology (IJSRET), 3 (4). pp. 764-766. ISSN 2278-0882 http://www.ijsret.org/ |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof Wijaya Bayu Murti, Wijaya Bayu Murti Norhayati binti Soin, N.Soin Design consideration of N-drift region doping concentration in high voltage VDMOS transistor |
| title | Design consideration of N-drift region doping concentration
in high voltage VDMOS transistor |
| title_full | Design consideration of N-drift region doping concentration
in high voltage VDMOS transistor |
| title_fullStr | Design consideration of N-drift region doping concentration
in high voltage VDMOS transistor |
| title_full_unstemmed | Design consideration of N-drift region doping concentration
in high voltage VDMOS transistor |
| title_short | Design consideration of N-drift region doping concentration
in high voltage VDMOS transistor |
| title_sort | design consideration of n-drift region doping concentration
in high voltage vdmos transistor |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utem.edu.my/id/eprint/14005/1/Design_Consideration_of_N-Drift_Region_Doping_Concentration_in_High_Voltage_VDMOS_Transistor.pdf http://eprints.utem.edu.my/id/eprint/14005/ http://www.ijsret.org/ |
| url_provider | http://eprints.utem.edu.my/ |