Haziezol Helmi bin Mohd Yusof, H., Wijaya Bayu Murti, W. B. M., & Norhayati binti Soin, N. (2014). Design consideration of N-drift region doping concentration in high voltage VDMOS transistor.
Chicago Style (17th ed.) CitationHaziezol Helmi bin Mohd Yusof, H.H.M.Yusof, Wijaya Bayu Murti Wijaya Bayu Murti, and N.Soin Norhayati binti Soin. Design Consideration of N-drift Region Doping Concentration in High Voltage VDMOS Transistor. 2014.
MLA (9th ed.) CitationHaziezol Helmi bin Mohd Yusof, H.H.M.Yusof, et al. Design Consideration of N-drift Region Doping Concentration in High Voltage VDMOS Transistor. 2014.
Warning: These citations may not always be 100% accurate.
