Fabrication And Electrical Characterization Of Silicon Bipolar Transistors In A O.5µm Based BiCMOS Technology.
Bipolar transistors are well known for its high current driving capability and current gains, while CMOS transistors are dominant in the integrated circuit market because of its low power consumption and small size advantage. The combination of both types of transistor on the same chip provides a hi...
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| Format: | Conference or Workshop Item |
| Language: | en |
| Published: |
2000
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| Online Access: | http://eprints.usm.my/8169/1/Fabrication_and_Electrical_Characterization_of_Silicon_Bipolar_Transistors_in_0.5_%28PPSF%29.pdf http://eprints.usm.my/8169/ |
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| author | Abdul Rahim, Alhan Farhanah Abdul Rahim, Ahmad Ismat Hashim, Md. Roslan Mohd. Saari, Shahrul Aman Ahmad, Mohd. Rais Abdul Wahab, Mohd. Zahrin Wan Adini, Wan Sabeng Syono, Mohd. Ismahadi |
| author_facet | Abdul Rahim, Alhan Farhanah Abdul Rahim, Ahmad Ismat Hashim, Md. Roslan Mohd. Saari, Shahrul Aman Ahmad, Mohd. Rais Abdul Wahab, Mohd. Zahrin Wan Adini, Wan Sabeng Syono, Mohd. Ismahadi |
| author_sort | Abdul Rahim, Alhan Farhanah |
| building | Hamzah Sendut Library |
| collection | Institutional Repository |
| content_provider | Universiti Sains Malaysia |
| content_source | USM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | Bipolar transistors are well known for its high current driving capability and current gains, while CMOS transistors are dominant in the integrated circuit market because of its low power consumption and small size advantage. The combination of both types of transistor on the same chip provides a high performance circuit with a high packing density. In this work 0.5-µm BiCMOS
technology is fully utilized to realize silicon bipolar transistors with optimized performance. Preliminary electrical results are presented on bipolar transistors fabricated for the first time in Malaysia. Significant improvements in electrical device performance can be achieved by optimizing the emitter drive-in temperature and choice of annealing system. |
| format | Conference or Workshop Item |
| id | my.usm.eprints.8169 |
| institution | Universiti Sains Malaysia |
| language | en |
| publishDate | 2000 |
| record_format | eprints |
| spelling | my.usm.eprints.8169 http://eprints.usm.my/8169/ Fabrication And Electrical Characterization Of Silicon Bipolar Transistors In A O.5µm Based BiCMOS Technology. Abdul Rahim, Alhan Farhanah Abdul Rahim, Ahmad Ismat Hashim, Md. Roslan Mohd. Saari, Shahrul Aman Ahmad, Mohd. Rais Abdul Wahab, Mohd. Zahrin Wan Adini, Wan Sabeng Syono, Mohd. Ismahadi QC1 Physics (General) Bipolar transistors are well known for its high current driving capability and current gains, while CMOS transistors are dominant in the integrated circuit market because of its low power consumption and small size advantage. The combination of both types of transistor on the same chip provides a high performance circuit with a high packing density. In this work 0.5-µm BiCMOS technology is fully utilized to realize silicon bipolar transistors with optimized performance. Preliminary electrical results are presented on bipolar transistors fabricated for the first time in Malaysia. Significant improvements in electrical device performance can be achieved by optimizing the emitter drive-in temperature and choice of annealing system. 2000-11 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/8169/1/Fabrication_and_Electrical_Characterization_of_Silicon_Bipolar_Transistors_in_0.5_%28PPSF%29.pdf Abdul Rahim, Alhan Farhanah and Abdul Rahim, Ahmad Ismat and Hashim, Md. Roslan and Mohd. Saari, Shahrul Aman and Ahmad, Mohd. Rais and Abdul Wahab, Mohd. Zahrin and Wan Adini, Wan Sabeng and Syono, Mohd. Ismahadi (2000) Fabrication And Electrical Characterization Of Silicon Bipolar Transistors In A O.5µm Based BiCMOS Technology. In: ICSE2000 Proceedings,. |
| spellingShingle | QC1 Physics (General) Abdul Rahim, Alhan Farhanah Abdul Rahim, Ahmad Ismat Hashim, Md. Roslan Mohd. Saari, Shahrul Aman Ahmad, Mohd. Rais Abdul Wahab, Mohd. Zahrin Wan Adini, Wan Sabeng Syono, Mohd. Ismahadi Fabrication And Electrical Characterization Of Silicon Bipolar Transistors In A O.5µm Based BiCMOS Technology. |
| title | Fabrication And Electrical Characterization Of Silicon Bipolar Transistors In A O.5µm Based BiCMOS Technology.
|
| title_full | Fabrication And Electrical Characterization Of Silicon Bipolar Transistors In A O.5µm Based BiCMOS Technology.
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| title_fullStr | Fabrication And Electrical Characterization Of Silicon Bipolar Transistors In A O.5µm Based BiCMOS Technology.
|
| title_full_unstemmed | Fabrication And Electrical Characterization Of Silicon Bipolar Transistors In A O.5µm Based BiCMOS Technology.
|
| title_short | Fabrication And Electrical Characterization Of Silicon Bipolar Transistors In A O.5µm Based BiCMOS Technology.
|
| title_sort | fabrication and electrical characterization of silicon bipolar transistors in a o.5µm based bicmos technology. |
| topic | QC1 Physics (General) |
| url | http://eprints.usm.my/8169/1/Fabrication_and_Electrical_Characterization_of_Silicon_Bipolar_Transistors_in_0.5_%28PPSF%29.pdf http://eprints.usm.my/8169/ |
| url_provider | http://eprints.usm.my/ |