Effect Of Annealing Temperature On Cerium Oxide Thin Films Grown By DC Sputtering Method

The cerium thin films were deposited on n-type Si (100) substrate by direct current (DC) sputtering followed by post-annealing at different temperature (400ᵒC and 600ᵒC, 800ᵒC, 1000ᵒC) in an oxygen ambient. In this study, the effect of annealing temperature on the crystallized CeO2 thin films was c...

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Main Authors: Ainita Rozati Mohd, Zabidi, Hassan, Zainuriah, Lim, Way Foong
Format: Conference or Workshop Item
Language:en
Published: 2020
Subjects:
Online Access:http://eprints.usm.my/49082/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2069.pdf
http://eprints.usm.my/49082/
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author Ainita Rozati Mohd, Zabidi
Hassan, Zainuriah
Lim, Way Foong
author_facet Ainita Rozati Mohd, Zabidi
Hassan, Zainuriah
Lim, Way Foong
author_sort Ainita Rozati Mohd, Zabidi
building Hamzah Sendut Library
collection Institutional Repository
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
continent Asia
country Malaysia
description The cerium thin films were deposited on n-type Si (100) substrate by direct current (DC) sputtering followed by post-annealing at different temperature (400ᵒC and 600ᵒC, 800ᵒC, 1000ᵒC) in an oxygen ambient. In this study, the effect of annealing temperature on the crystallized CeO2 thin films was characterized by using grazing incidence X-ray diffraction (GIXRD). The surface topology and surface morphology of the CeO2 were analyzed by using atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM). The energy bandgap was calculated from the ultraviolet-visible spectroscopy (UV-Vis) measurement. GIXRD result shows (111) plane has the highest peak intensity, therefore (111) plane was selected as the preferred orientation for CeO2 thin films. AFM results reveal the root-mean-square (RMS) roughness of the CeO2 thin films decreased as annealing temperature increased from 400ᵒC to 1000ᵒC
format Conference or Workshop Item
id my.usm.eprints.49082
institution Universiti Sains Malaysia
language en
publishDate 2020
record_format eprints
spelling my.usm.eprints.49082 http://eprints.usm.my/49082/ Effect Of Annealing Temperature On Cerium Oxide Thin Films Grown By DC Sputtering Method Ainita Rozati Mohd, Zabidi Hassan, Zainuriah Lim, Way Foong QC1-999 Physics The cerium thin films were deposited on n-type Si (100) substrate by direct current (DC) sputtering followed by post-annealing at different temperature (400ᵒC and 600ᵒC, 800ᵒC, 1000ᵒC) in an oxygen ambient. In this study, the effect of annealing temperature on the crystallized CeO2 thin films was characterized by using grazing incidence X-ray diffraction (GIXRD). The surface topology and surface morphology of the CeO2 were analyzed by using atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM). The energy bandgap was calculated from the ultraviolet-visible spectroscopy (UV-Vis) measurement. GIXRD result shows (111) plane has the highest peak intensity, therefore (111) plane was selected as the preferred orientation for CeO2 thin films. AFM results reveal the root-mean-square (RMS) roughness of the CeO2 thin films decreased as annealing temperature increased from 400ᵒC to 1000ᵒC 2020-12-02 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/49082/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2069.pdf Ainita Rozati Mohd, Zabidi and Hassan, Zainuriah and Lim, Way Foong (2020) Effect Of Annealing Temperature On Cerium Oxide Thin Films Grown By DC Sputtering Method. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020.
spellingShingle QC1-999 Physics
Ainita Rozati Mohd, Zabidi
Hassan, Zainuriah
Lim, Way Foong
Effect Of Annealing Temperature On Cerium Oxide Thin Films Grown By DC Sputtering Method
title Effect Of Annealing Temperature On Cerium Oxide Thin Films Grown By DC Sputtering Method
title_full Effect Of Annealing Temperature On Cerium Oxide Thin Films Grown By DC Sputtering Method
title_fullStr Effect Of Annealing Temperature On Cerium Oxide Thin Films Grown By DC Sputtering Method
title_full_unstemmed Effect Of Annealing Temperature On Cerium Oxide Thin Films Grown By DC Sputtering Method
title_short Effect Of Annealing Temperature On Cerium Oxide Thin Films Grown By DC Sputtering Method
title_sort effect of annealing temperature on cerium oxide thin films grown by dc sputtering method
topic QC1-999 Physics
url http://eprints.usm.my/49082/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2069.pdf
http://eprints.usm.my/49082/
url_provider http://eprints.usm.my/