Thin Film Undoped And P-Doped GaN As Sensor
A GaN thin film based sensor is demonstrated for sensing detection. The GaN thin film was grown on a sapphire substrate by using Metal Organic Chemical Vapour Deposition (MOCVD). An undoped and p-doped GaN thin film were used to investigate their reaction upon exposure. The interaction between the G...
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| Format: | Conference or Workshop Item |
| Language: | en |
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2020
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| Online Access: | http://eprints.usm.my/48921/1/MNRG_MSNSB01.pdf http://eprints.usm.my/48921/ |
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| _version_ | 1834504247506370560 |
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| author | Nashaain, N.M. Syamsul, M. Abdalmohammed, S. A. A. Nor, M. Nuzaihan M. |
| author_facet | Nashaain, N.M. Syamsul, M. Abdalmohammed, S. A. A. Nor, M. Nuzaihan M. |
| author_sort | Nashaain, N.M. |
| building | Hamzah Sendut Library |
| collection | Institutional Repository |
| content_provider | Universiti Sains Malaysia |
| content_source | USM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | A GaN thin film based sensor is demonstrated for sensing detection. The GaN thin film was grown on a sapphire substrate by using Metal Organic Chemical Vapour Deposition (MOCVD). An undoped and p-doped GaN thin film were used to investigate their reaction upon exposure. The interaction between the GaN surface and molecules, and the sensing mechanism were inspected. It was found that the electrical resistance of semiconducting GaN thin film decreases as time increases. The Undoped GaN (U1) demonstrates good sensitivity, stability and low resistivity by increasing time compare to other samples. |
| format | Conference or Workshop Item |
| id | my.usm.eprints.48921 |
| institution | Universiti Sains Malaysia |
| language | en |
| publishDate | 2020 |
| record_format | eprints |
| spelling | my.usm.eprints.48921 http://eprints.usm.my/48921/ Thin Film Undoped And P-Doped GaN As Sensor Nashaain, N.M. Syamsul, M. Abdalmohammed, S. A. A. Nor, M. Nuzaihan M. QC1-999 Physics A GaN thin film based sensor is demonstrated for sensing detection. The GaN thin film was grown on a sapphire substrate by using Metal Organic Chemical Vapour Deposition (MOCVD). An undoped and p-doped GaN thin film were used to investigate their reaction upon exposure. The interaction between the GaN surface and molecules, and the sensing mechanism were inspected. It was found that the electrical resistance of semiconducting GaN thin film decreases as time increases. The Undoped GaN (U1) demonstrates good sensitivity, stability and low resistivity by increasing time compare to other samples. 2020-12-02 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48921/1/MNRG_MSNSB01.pdf Nashaain, N.M. and Syamsul, M. and Abdalmohammed, S. A. A. and Nor, M. Nuzaihan M. (2020) Thin Film Undoped And P-Doped GaN As Sensor. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020). |
| spellingShingle | QC1-999 Physics Nashaain, N.M. Syamsul, M. Abdalmohammed, S. A. A. Nor, M. Nuzaihan M. Thin Film Undoped And P-Doped GaN As Sensor |
| title | Thin Film Undoped And P-Doped GaN As Sensor |
| title_full | Thin Film Undoped And P-Doped GaN As Sensor |
| title_fullStr | Thin Film Undoped And P-Doped GaN As Sensor |
| title_full_unstemmed | Thin Film Undoped And P-Doped GaN As Sensor |
| title_short | Thin Film Undoped And P-Doped GaN As Sensor |
| title_sort | thin film undoped and p-doped gan as sensor |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48921/1/MNRG_MSNSB01.pdf http://eprints.usm.my/48921/ |
| url_provider | http://eprints.usm.my/ |