Role of NH3 Annealing Treatment in Improving SeN Layer on GaAs Substrate Using Electron Beam Evaporator
In this work, the growth of scandium nitride (SeN) on gallium arsenide (GaAs) substrate is demonstrated using electron beam (e-beam) evaporator with successive annealing in ammonia (NHJ) ambient. As observed in field effect scanning electron microscopy (FE-SEM), the surface morphology of the SeN...
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| Language: | en |
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2015
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| Online Access: | http://eprints.usm.my/48767/1/Section%20C%20161-2.pdf%20cut.pdf http://eprints.usm.my/48767/ |
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| author | Alvin, Y. S. M. Zainal, N. Hassan, Z. |
| author_facet | Alvin, Y. S. M. Zainal, N. Hassan, Z. |
| author_sort | Alvin, Y. S. M. |
| building | Hamzah Sendut Library |
| collection | Institutional Repository |
| content_provider | Universiti Sains Malaysia |
| content_source | USM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | In this work, the growth of scandium nitride (SeN) on gallium arsenide (GaAs) substrate is
demonstrated using electron beam (e-beam) evaporator with successive annealing in ammonia (NHJ)
ambient. As observed in field effect scanning electron microscopy (FE-SEM), the surface morphology
of the SeN layer was started to transform from rice grains-like structure to rock salt grains-like
structure by increasing the temperature from 750 oc to 900 °C. The rock salt grains-like structure is
similar to high quality SeN, as reported in literature. However, the surface degraded with the presence
of voids at 980 °C. The existence of SeN bond was confirmed by x-ray photospectroscopy (XPS)
measurement. The photoluminescence (PL) of near-to-band-edge SeN peak was observed in all
samples. Furthermore, the SeN peaks in Raman spectrum were obvious when the sample was
annealed above 850 °C. Based on the evidences, the growth of SeN using the above techniques was
successful, with the annealing temperature above 850 °C. |
| format | Conference or Workshop Item |
| id | my.usm.eprints.48767 |
| institution | Universiti Sains Malaysia |
| language | en |
| publishDate | 2015 |
| record_format | eprints |
| spelling | my.usm.eprints.48767 http://eprints.usm.my/48767/ Role of NH3 Annealing Treatment in Improving SeN Layer on GaAs Substrate Using Electron Beam Evaporator Alvin, Y. S. M. Zainal, N. Hassan, Z. QC1-999 Physics In this work, the growth of scandium nitride (SeN) on gallium arsenide (GaAs) substrate is demonstrated using electron beam (e-beam) evaporator with successive annealing in ammonia (NHJ) ambient. As observed in field effect scanning electron microscopy (FE-SEM), the surface morphology of the SeN layer was started to transform from rice grains-like structure to rock salt grains-like structure by increasing the temperature from 750 oc to 900 °C. The rock salt grains-like structure is similar to high quality SeN, as reported in literature. However, the surface degraded with the presence of voids at 980 °C. The existence of SeN bond was confirmed by x-ray photospectroscopy (XPS) measurement. The photoluminescence (PL) of near-to-band-edge SeN peak was observed in all samples. Furthermore, the SeN peaks in Raman spectrum were obvious when the sample was annealed above 850 °C. Based on the evidences, the growth of SeN using the above techniques was successful, with the annealing temperature above 850 °C. 2015-06-09 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48767/1/Section%20C%20161-2.pdf%20cut.pdf Alvin, Y. S. M. and Zainal, N. and Hassan, Z. (2015) Role of NH3 Annealing Treatment in Improving SeN Layer on GaAs Substrate Using Electron Beam Evaporator. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015). |
| spellingShingle | QC1-999 Physics Alvin, Y. S. M. Zainal, N. Hassan, Z. Role of NH3 Annealing Treatment in Improving SeN Layer on GaAs Substrate Using Electron Beam Evaporator |
| title | Role of NH3 Annealing Treatment in Improving SeN Layer on GaAs Substrate Using Electron Beam Evaporator |
| title_full | Role of NH3 Annealing Treatment in Improving SeN Layer on GaAs Substrate Using Electron Beam Evaporator |
| title_fullStr | Role of NH3 Annealing Treatment in Improving SeN Layer on GaAs Substrate Using Electron Beam Evaporator |
| title_full_unstemmed | Role of NH3 Annealing Treatment in Improving SeN Layer on GaAs Substrate Using Electron Beam Evaporator |
| title_short | Role of NH3 Annealing Treatment in Improving SeN Layer on GaAs Substrate Using Electron Beam Evaporator |
| title_sort | role of nh3 annealing treatment in improving sen layer on gaas substrate using electron beam evaporator |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48767/1/Section%20C%20161-2.pdf%20cut.pdf http://eprints.usm.my/48767/ |
| url_provider | http://eprints.usm.my/ |