Improved Optoelectronic Characteristics of Post-Annealed Ti/Al/ITO Transparent Conducting Electrodes Deposited on n-GaN
We report on the improved structural. electrical and optical properties of the Ti/AI/ITO transparent conducting electrodes (TCEs) deposited on n-GaN. The TCEs were deposited by RF/DC magnetron sputtering under Ar ambient at room temperature. The as-deposited TCEs were annealed at 600 oc in N2 amb...
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2015
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| Online Access: | http://eprints.usm.my/48406/1/Section%20C%20148.pdf%20cut.pdf http://eprints.usm.my/48406/ |
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| author | Ali, Ahmad Hadi Shuhaimi, Ahmad Hassan, Zainuriah |
| author_facet | Ali, Ahmad Hadi Shuhaimi, Ahmad Hassan, Zainuriah |
| author_sort | Ali, Ahmad Hadi |
| building | Hamzah Sendut Library |
| collection | Institutional Repository |
| content_provider | Universiti Sains Malaysia |
| content_source | USM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | We report on the improved structural. electrical and optical properties of the Ti/AI/ITO transparent
conducting electrodes (TCEs) deposited on n-GaN. The TCEs were deposited by RF/DC magnetron
sputtering under Ar ambient at room temperature. The as-deposited TCEs were annealed at 600 oc in
N2 ambient for 15 min. The structural, electrical and optical properties of the TCEs were characterized
by 2-Theta X-ray diffraction (XRD), atomic force microscope (AFM). Hall effects, 1-V and UV-visible
measurement system. From XRD measurement, significant ITO (222) and (411) peaks were observed
after the sample was post-annealed at 600 oc. Morphological analysis by AFM shows that surface
roughness Rq of the post-annealed sample is smoother as compared to the as-deposited sample. The
electrical resistivity of the TCEs layer decreases to 8.607x10-5n-cm after the post-annealing process.
Further analysis on the 1-V characteristics reveals that the post-annealed samples have better
Ohmicbehavior than the as-deposited sample. The post-annealed sample shows high optical transmittance characteristics in visible spectrum of -95%. The figure of merit (FOM) of the as deposited and post-annealed samples are 2.39x1 0-40-1 and 5.91 x1 o-2Q-1, respectively. Therefore, the post-annealed TCEs show the best electrical and optical quality due to the improved structural and morphological characteristics. |
| format | Conference or Workshop Item |
| id | my.usm.eprints.48406 |
| institution | Universiti Sains Malaysia |
| language | en |
| publishDate | 2015 |
| record_format | eprints |
| spelling | my.usm.eprints.48406 http://eprints.usm.my/48406/ Improved Optoelectronic Characteristics of Post-Annealed Ti/Al/ITO Transparent Conducting Electrodes Deposited on n-GaN Ali, Ahmad Hadi Shuhaimi, Ahmad Hassan, Zainuriah QC1 Physics (General) We report on the improved structural. electrical and optical properties of the Ti/AI/ITO transparent conducting electrodes (TCEs) deposited on n-GaN. The TCEs were deposited by RF/DC magnetron sputtering under Ar ambient at room temperature. The as-deposited TCEs were annealed at 600 oc in N2 ambient for 15 min. The structural, electrical and optical properties of the TCEs were characterized by 2-Theta X-ray diffraction (XRD), atomic force microscope (AFM). Hall effects, 1-V and UV-visible measurement system. From XRD measurement, significant ITO (222) and (411) peaks were observed after the sample was post-annealed at 600 oc. Morphological analysis by AFM shows that surface roughness Rq of the post-annealed sample is smoother as compared to the as-deposited sample. The electrical resistivity of the TCEs layer decreases to 8.607x10-5n-cm after the post-annealing process. Further analysis on the 1-V characteristics reveals that the post-annealed samples have better Ohmicbehavior than the as-deposited sample. The post-annealed sample shows high optical transmittance characteristics in visible spectrum of -95%. The figure of merit (FOM) of the as deposited and post-annealed samples are 2.39x1 0-40-1 and 5.91 x1 o-2Q-1, respectively. Therefore, the post-annealed TCEs show the best electrical and optical quality due to the improved structural and morphological characteristics. 2015-06 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48406/1/Section%20C%20148.pdf%20cut.pdf Ali, Ahmad Hadi and Shuhaimi, Ahmad and Hassan, Zainuriah (2015) Improved Optoelectronic Characteristics of Post-Annealed Ti/Al/ITO Transparent Conducting Electrodes Deposited on n-GaN. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015). |
| spellingShingle | QC1 Physics (General) Ali, Ahmad Hadi Shuhaimi, Ahmad Hassan, Zainuriah Improved Optoelectronic Characteristics of Post-Annealed Ti/Al/ITO Transparent Conducting Electrodes Deposited on n-GaN |
| title | Improved Optoelectronic Characteristics of Post-Annealed Ti/Al/ITO Transparent Conducting Electrodes Deposited on n-GaN |
| title_full | Improved Optoelectronic Characteristics of Post-Annealed Ti/Al/ITO Transparent Conducting Electrodes Deposited on n-GaN |
| title_fullStr | Improved Optoelectronic Characteristics of Post-Annealed Ti/Al/ITO Transparent Conducting Electrodes Deposited on n-GaN |
| title_full_unstemmed | Improved Optoelectronic Characteristics of Post-Annealed Ti/Al/ITO Transparent Conducting Electrodes Deposited on n-GaN |
| title_short | Improved Optoelectronic Characteristics of Post-Annealed Ti/Al/ITO Transparent Conducting Electrodes Deposited on n-GaN |
| title_sort | improved optoelectronic characteristics of post-annealed ti/al/ito transparent conducting electrodes deposited on n-gan |
| topic | QC1 Physics (General) |
| url | http://eprints.usm.my/48406/1/Section%20C%20148.pdf%20cut.pdf http://eprints.usm.my/48406/ |
| url_provider | http://eprints.usm.my/ |