Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon
Highly doped n-type porous silicons (PS) were prepared via electrochemical etching. The effect of current density (50 – 300 mA cm-2), etching time (30 – 300 s) and HF concentration (9.2 – 49.0% (v/v)) on the morphology, pore diameter, porosity, surface roughness and electrical properties of the PS w...
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis |
| Language: | en |
| Published: |
2011
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/42764/1/SURIANI_HAJI_YAAKOB.pdf http://eprints.usm.my/42764/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1834502660300996608 |
|---|---|
| author | Yaakob, Suriani Haji |
| author_facet | Yaakob, Suriani Haji |
| author_sort | Yaakob, Suriani Haji |
| building | Hamzah Sendut Library |
| collection | Institutional Repository |
| content_provider | Universiti Sains Malaysia |
| content_source | USM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | Highly doped n-type porous silicons (PS) were prepared via electrochemical etching. The effect of current density (50 – 300 mA cm-2), etching time (30 – 300 s) and HF concentration (9.2 – 49.0% (v/v)) on the morphology, pore diameter, porosity, surface roughness and electrical properties of the PS were studied. These properties were characterized by Scanning Electron Microscopy (SEM), gravimetric method, Atomic Force Microscopy (AFM) and Current-Voltage (I-V) characteristics. The increment in current density has changed the morphology of the PS from interconnected network to columnar with side branching. However, with the increase in the etching time and HF concentration, this disappeared to give smooth side wall pores. |
| format | Thesis |
| id | my.usm.eprints.42764 |
| institution | Universiti Sains Malaysia |
| language | en |
| publishDate | 2011 |
| record_format | eprints |
| spelling | my.usm.eprints.42764 http://eprints.usm.my/42764/ Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon Yaakob, Suriani Haji QD1-999 Chemistry Highly doped n-type porous silicons (PS) were prepared via electrochemical etching. The effect of current density (50 – 300 mA cm-2), etching time (30 – 300 s) and HF concentration (9.2 – 49.0% (v/v)) on the morphology, pore diameter, porosity, surface roughness and electrical properties of the PS were studied. These properties were characterized by Scanning Electron Microscopy (SEM), gravimetric method, Atomic Force Microscopy (AFM) and Current-Voltage (I-V) characteristics. The increment in current density has changed the morphology of the PS from interconnected network to columnar with side branching. However, with the increase in the etching time and HF concentration, this disappeared to give smooth side wall pores. 2011-07 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/42764/1/SURIANI_HAJI_YAAKOB.pdf Yaakob, Suriani Haji (2011) Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon. Masters thesis, Universiti Sains Malaysia. |
| spellingShingle | QD1-999 Chemistry Yaakob, Suriani Haji Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon |
| title | Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon |
| title_full | Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon |
| title_fullStr | Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon |
| title_full_unstemmed | Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon |
| title_short | Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon |
| title_sort | effects of current density, etching time and hydrofluoric acid concentration on the formation and morphology of highly doped n-type porous silicon |
| topic | QD1-999 Chemistry |
| url | http://eprints.usm.my/42764/1/SURIANI_HAJI_YAAKOB.pdf http://eprints.usm.my/42764/ |
| url_provider | http://eprints.usm.my/ |