Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition
Physical vapor deposition (PVD) method is widely used in semiconductor industry in metallic film deposition process. It has been found that the metallic film properties are influenced by the parameter change in the PVD sputtering machine. Ionized physical vapor deposition (I-PVD) came about when ele...
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| Format: | Thesis |
| Language: | en |
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2012
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| Online Access: | http://eprints.usm.my/41945/1/LEOW_MUN_TYNG.pdf http://eprints.usm.my/41945/ |
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| _version_ | 1834502446709211136 |
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| author | Leow, Mun Tyng |
| author_facet | Leow, Mun Tyng |
| author_sort | Leow, Mun Tyng |
| building | Hamzah Sendut Library |
| collection | Institutional Repository |
| content_provider | Universiti Sains Malaysia |
| content_source | USM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | Physical vapor deposition (PVD) method is widely used in semiconductor industry in metallic film deposition process. It has been found that the metallic film properties are influenced by the parameter change in the PVD sputtering machine. Ionized physical vapor deposition (I-PVD) came about when electronic devices shrink in sizes which increase the packing density of the device. This lead to higher aspect ratio of the via size and smaller interconnect lines of the integrated circuit. I-PVD sputtering method had successfully relieved the step coverage issues for high aspect ratio trenches and vias. In semiconductor industries, reliability surfaced as the major enemy. |
| format | Thesis |
| id | my.usm.eprints.41945 |
| institution | Universiti Sains Malaysia |
| language | en |
| publishDate | 2012 |
| record_format | eprints |
| spelling | my.usm.eprints.41945 http://eprints.usm.my/41945/ Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition Leow, Mun Tyng QC1 Physics (General) Physical vapor deposition (PVD) method is widely used in semiconductor industry in metallic film deposition process. It has been found that the metallic film properties are influenced by the parameter change in the PVD sputtering machine. Ionized physical vapor deposition (I-PVD) came about when electronic devices shrink in sizes which increase the packing density of the device. This lead to higher aspect ratio of the via size and smaller interconnect lines of the integrated circuit. I-PVD sputtering method had successfully relieved the step coverage issues for high aspect ratio trenches and vias. In semiconductor industries, reliability surfaced as the major enemy. 2012 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/41945/1/LEOW_MUN_TYNG.pdf Leow, Mun Tyng (2012) Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition. Masters thesis, Universiti Sains Malaysia. |
| spellingShingle | QC1 Physics (General) Leow, Mun Tyng Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition |
| title | Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition |
| title_full | Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition |
| title_fullStr | Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition |
| title_full_unstemmed | Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition |
| title_short | Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition |
| title_sort | characterization of ti/tin/alcu film stack prepared by physical vapor deposition |
| topic | QC1 Physics (General) |
| url | http://eprints.usm.my/41945/1/LEOW_MUN_TYNG.pdf http://eprints.usm.my/41945/ |
| url_provider | http://eprints.usm.my/ |