Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
The wide band gap gallium nitride (GaN) based semiconductor system has great potential for applications in high-power, high-frequency, and hightemperature optoelectronic devices due to its superior properties, such as large breakdown field, high electron mobility, and thermal stability at elevated t...
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| Format: | Conference or Workshop Item |
| Language: | en |
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2007
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| Online Access: | http://eprints.usm.my/14829/1/paper5.pdf http://eprints.usm.my/14829/ |
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| _version_ | 1834438384874946560 |
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| author | L, S Chuah Hassan, Z. Abu Hassan, H |
| author_facet | L, S Chuah Hassan, Z. Abu Hassan, H |
| author_sort | L, S Chuah |
| building | Hamzah Sendut Library |
| collection | Institutional Repository |
| content_provider | Universiti Sains Malaysia |
| content_source | USM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | The wide band gap gallium nitride (GaN) based semiconductor system has great potential for applications in high-power, high-frequency, and hightemperature optoelectronic devices due to its superior properties, such as large breakdown field, high electron mobility, and thermal stability at elevated temperature.
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| format | Conference or Workshop Item |
| id | my.usm.eprints.14829 |
| institution | Universiti Sains Malaysia |
| language | en |
| publishDate | 2007 |
| record_format | eprints |
| spelling | my.usm.eprints.14829 http://eprints.usm.my/14829/ Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy. L, S Chuah Hassan, Z. Abu Hassan, H QC1 Physics (General) The wide band gap gallium nitride (GaN) based semiconductor system has great potential for applications in high-power, high-frequency, and hightemperature optoelectronic devices due to its superior properties, such as large breakdown field, high electron mobility, and thermal stability at elevated temperature. 2007 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/14829/1/paper5.pdf L, S Chuah and Hassan, Z. and Abu Hassan, H (2007) Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur. |
| spellingShingle | QC1 Physics (General) L, S Chuah Hassan, Z. Abu Hassan, H Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy. |
| title | Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
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| title_full | Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
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| title_fullStr | Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
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| title_full_unstemmed | Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
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| title_short | Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
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| title_sort | optical characterization of gan thin film grown on si(111) by radio-frequency plasma-assisted molecular beam epitaxy. |
| topic | QC1 Physics (General) |
| url | http://eprints.usm.my/14829/1/paper5.pdf http://eprints.usm.my/14829/ |
| url_provider | http://eprints.usm.my/ |