Band Anti-Crossing Modelling on Tailored Ga1-xInxN yAs1-y Band Gap Energy Based Nitrogen Fraction

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Bibliographic Details
Main Authors:	Muhammad Izzuddin Abd Samad, Mohammad Syahmi Nordin, Nafarizal Nayan, Afishah Alias, Adrian Boland-Thoms, Anthony John Vickers, Khairul Anuar Mohamad, Marinah Othman
Format:	journal::journal article
Language:	en
Published:	Horizon Research Publishing 2024
Subjects:	Band Anti-Crossing, Dilute Nitride, Gallium Arsenide, Ga1-xInxN yAs1-y Alloy, Band Gap, 1.3 μm Wavelength
Online Access:	http://www.hrpub.org/journals/article_info.php?aid=8612
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