Circuit level modeling of electrically doped adenine–thymine nanotube based field effect transistor

We investigate the gate-controlled, electrically doped tunnelling current in Adenine-Thymine heterojunction nanotube-based Field Effect Transistor (FET). This analytical model FET is designed by Density Functional Theory (DFT) and Non-Equilibrium Green's Function (NEGF) based First principle fo...

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Bibliographic Details

Main Authors:	Dey, Debarati, De, Debashis, Ghaemi, Ferial, Ahmadian, Ali, Abdullah, Luqman Chuah
Format:	Article
Language:	en
Published:	Institute of Electrical and Electronics Engineers 2020
Online Access:	http://psasir.upm.edu.my/id/eprint/88164/1/ABSTRACT.pdf http://psasir.upm.edu.my/id/eprint/88164/ https://ieeexplore.ieee.org/document/8946542
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