Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS
A numerical analysis of a CdTe/Si dual-junction solar cell in terms of defect density introduced at various defect energy levels in the absorber layer is provided. The impact of defect concentration is analyzed against the thickness of the CdTe layer, and variation of the top and bottom cell bandgap...
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Nature Research
2025
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| author | Isah M. Doroody C. Rahman K.S. Rahman M.N.A. Goje A.A. Soudagar M.E.M. Kiong T.S. Mubarak N.M. Zuhdi A.W.M. |
| author2 | 57219626175 |
| author_facet | 57219626175 Isah M. Doroody C. Rahman K.S. Rahman M.N.A. Goje A.A. Soudagar M.E.M. Kiong T.S. Mubarak N.M. Zuhdi A.W.M. |
| author_sort | Isah M. |
| building | UNITEN Library |
| collection | Institutional Repository |
| content_provider | Universiti Tenaga Nasional |
| content_source | UNITEN Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | A numerical analysis of a CdTe/Si dual-junction solar cell in terms of defect density introduced at various defect energy levels in the absorber layer is provided. The impact of defect concentration is analyzed against the thickness of the CdTe layer, and variation of the top and bottom cell bandgaps is studied. The results show that CdTe thin film with defects density between 1014 and 1015�cm?3 is acceptable for the top cell of the designed dual-junction solar cell. The variations of the defect concentrations against the thickness of the CdTe layer indicate that the open circuit voltage, short circuit current density, and efficiency (?) are more affected by the defect density at higher CdTe thickness. In contrast, the Fill factor is mainly affected by the defect density, regardless of the thin film?s thickness. An acceptable defect density of up to 1015�cm?3 at a CdTe thickness of 300�nm was obtained from this work. The bandgap variation shows optimal results for a CdTe with bandgaps ranging from 1.45 to 1.7�eV in tandem with a Si bandgap of about 1.1�eV. This study highlights the significance of tailoring defect density at different energy levels to realize viable CdTe/Si dual junction tandem solar cells. It also demonstrates how the impact of defect concentration changes with the thickness of the solar cell absorber layer. ? The Author(s) 2024. |
| format | Article |
| id | my.uniten.dspace-36198 |
| institution | Universiti Tenaga Nasional |
| publishDate | 2025 |
| publisher | Nature Research |
| record_format | dspace |
| spelling | my.uniten.dspace-361982025-03-03T15:41:33Z Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS Isah M. Doroody C. Rahman K.S. Rahman M.N.A. Goje A.A. Soudagar M.E.M. Kiong T.S. Mubarak N.M. Zuhdi A.W.M. 57219626175 56905467200 56348138800 57102327000 58856415700 57194384501 57216824752 36634677600 56589966300 article controlled study current density electric potential energy short circuit current solar cell thickness A numerical analysis of a CdTe/Si dual-junction solar cell in terms of defect density introduced at various defect energy levels in the absorber layer is provided. The impact of defect concentration is analyzed against the thickness of the CdTe layer, and variation of the top and bottom cell bandgaps is studied. The results show that CdTe thin film with defects density between 1014 and 1015�cm?3 is acceptable for the top cell of the designed dual-junction solar cell. The variations of the defect concentrations against the thickness of the CdTe layer indicate that the open circuit voltage, short circuit current density, and efficiency (?) are more affected by the defect density at higher CdTe thickness. In contrast, the Fill factor is mainly affected by the defect density, regardless of the thin film?s thickness. An acceptable defect density of up to 1015�cm?3 at a CdTe thickness of 300�nm was obtained from this work. The bandgap variation shows optimal results for a CdTe with bandgaps ranging from 1.45 to 1.7�eV in tandem with a Si bandgap of about 1.1�eV. This study highlights the significance of tailoring defect density at different energy levels to realize viable CdTe/Si dual junction tandem solar cells. It also demonstrates how the impact of defect concentration changes with the thickness of the solar cell absorber layer. ? The Author(s) 2024. Final 2025-03-03T07:41:33Z 2025-03-03T07:41:33Z 2024 Article 10.1038/s41598-024-55616-2 2-s2.0-85186171646 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85186171646&doi=10.1038%2fs41598-024-55616-2&partnerID=40&md5=7d7c87e78ede27b11f79411e74bc9b7e https://irepository.uniten.edu.my/handle/123456789/36198 14 1 4804 All Open Access; Gold Open Access; Green Open Access Nature Research Scopus |
| spellingShingle | article controlled study current density electric potential energy short circuit current solar cell thickness Isah M. Doroody C. Rahman K.S. Rahman M.N.A. Goje A.A. Soudagar M.E.M. Kiong T.S. Mubarak N.M. Zuhdi A.W.M. Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS |
| title | Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS |
| title_full | Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS |
| title_fullStr | Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS |
| title_full_unstemmed | Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS |
| title_short | Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS |
| title_sort | exploring the impact of defect energy levels in cdte/si dual-junction solar cells using wxamps |
| topic | article controlled study current density electric potential energy short circuit current solar cell thickness |
| url_provider | http://dspace.uniten.edu.my/ |