Effect of deposition regime transition on the properties of Al:ZnO transparent conducting oxide layer by radio frequency magnetron sputtering system
High-quality zinc oxide thin films doped with aluminium adatoms have effectively been fabricated on pristine soda-lime silica glass substrates via radio frequency magnetron sputtering system. The deposition temperature was varied to explore the impact of deposition regime transition of as-deposited...
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2025
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| author | Abd Rahman M.N. Zuhdi A.W.M. Amirulddin U.A.U. Isah M. Azman N.I. Arsad A.Z. Arzaee N.A. Mansor M. Shuhaimi A. |
| author2 | 57102327000 |
| author_facet | 57102327000 Abd Rahman M.N. Zuhdi A.W.M. Amirulddin U.A.U. Isah M. Azman N.I. Arsad A.Z. Arzaee N.A. Mansor M. Shuhaimi A. |
| author_sort | Abd Rahman M.N. |
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| content_provider | Universiti Tenaga Nasional |
| content_source | UNITEN Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | High-quality zinc oxide thin films doped with aluminium adatoms have effectively been fabricated on pristine soda-lime silica glass substrates via radio frequency magnetron sputtering system. The deposition temperature was varied to explore the impact of deposition regime transition of as-deposited Al:ZnO thin films on their performance as transparent conducting oxide layers. In particular, the depositions were conducted at room temperature, 100 �C, 200 �C, and 300 �C, allowing for a comprehensive assessment of the resulting films. The Raman spectra depicted the modulation of Raman bands in correlation with the deposition regime transition, illustrating the impact of thermal induction on various properties of the as-deposited aluminium-doped zinc oxide thin films. Atomic force microscopy reveals the transformation from nearly spherical to elongated shape structure was obtained as the deposition process shifted from kinetic limited to thermodynamic limited regimes. The phase analysis and grazing incident of x-ray diffractometer disclose a single crystal orientation has been achieved at thermodynamic limited regime. However, two different crystal planes were predominant comparing between the surface and structural of as-deposited aluminium-doped zinc oxide thin films. It is also evident that a highly transparent with low lattice strain and better carrier concentrations of as-deposited aluminium-doped zinc oxide thin films were realized at thermodynamic limited regimes. ? 2024 Elsevier Ltd and Techna Group S.r.l. |
| format | Article |
| id | my.uniten.dspace-36197 |
| institution | Universiti Tenaga Nasional |
| publishDate | 2025 |
| publisher | Elsevier Ltd |
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| spelling | my.uniten.dspace-361972025-03-03T15:41:33Z Effect of deposition regime transition on the properties of Al:ZnO transparent conducting oxide layer by radio frequency magnetron sputtering system Abd Rahman M.N. Zuhdi A.W.M. Amirulddin U.A.U. Isah M. Azman N.I. Arsad A.Z. Arzaee N.A. Mansor M. Shuhaimi A. 57102327000 56589966300 26422804600 57219626175 56104480900 56926685200 57204034965 57222998145 55752997100 Aluminum coatings Conductive films Crystal atomic structure Crystal lattices Descaling Hard facing Magnetron sputtering Transparent conducting oxides X ray diffraction analysis Zinc oxide Aluminum zinc oxides Aluminum-doped zinc oxide thin films Deposition regime transition Deposition regimes Energy Kinetic limited regime Lateral deposition Regime transition Thermodynamic limited regime Vertical depositions Crystal orientation High-quality zinc oxide thin films doped with aluminium adatoms have effectively been fabricated on pristine soda-lime silica glass substrates via radio frequency magnetron sputtering system. The deposition temperature was varied to explore the impact of deposition regime transition of as-deposited Al:ZnO thin films on their performance as transparent conducting oxide layers. In particular, the depositions were conducted at room temperature, 100 �C, 200 �C, and 300 �C, allowing for a comprehensive assessment of the resulting films. The Raman spectra depicted the modulation of Raman bands in correlation with the deposition regime transition, illustrating the impact of thermal induction on various properties of the as-deposited aluminium-doped zinc oxide thin films. Atomic force microscopy reveals the transformation from nearly spherical to elongated shape structure was obtained as the deposition process shifted from kinetic limited to thermodynamic limited regimes. The phase analysis and grazing incident of x-ray diffractometer disclose a single crystal orientation has been achieved at thermodynamic limited regime. However, two different crystal planes were predominant comparing between the surface and structural of as-deposited aluminium-doped zinc oxide thin films. It is also evident that a highly transparent with low lattice strain and better carrier concentrations of as-deposited aluminium-doped zinc oxide thin films were realized at thermodynamic limited regimes. ? 2024 Elsevier Ltd and Techna Group S.r.l. Final 2025-03-03T07:41:33Z 2025-03-03T07:41:33Z 2024 Article 10.1016/j.ceramint.2024.08.158 2-s2.0-85201756948 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85201756948&doi=10.1016%2fj.ceramint.2024.08.158&partnerID=40&md5=e60a4addfcfd68203f4d238f4d63a681 https://irepository.uniten.edu.my/handle/123456789/36197 50 21 43070 43081 Elsevier Ltd Scopus |
| spellingShingle | Aluminum coatings Conductive films Crystal atomic structure Crystal lattices Descaling Hard facing Magnetron sputtering Transparent conducting oxides X ray diffraction analysis Zinc oxide Aluminum zinc oxides Aluminum-doped zinc oxide thin films Deposition regime transition Deposition regimes Energy Kinetic limited regime Lateral deposition Regime transition Thermodynamic limited regime Vertical depositions Crystal orientation Abd Rahman M.N. Zuhdi A.W.M. Amirulddin U.A.U. Isah M. Azman N.I. Arsad A.Z. Arzaee N.A. Mansor M. Shuhaimi A. Effect of deposition regime transition on the properties of Al:ZnO transparent conducting oxide layer by radio frequency magnetron sputtering system |
| title | Effect of deposition regime transition on the properties of Al:ZnO transparent conducting oxide layer by radio frequency magnetron sputtering system |
| title_full | Effect of deposition regime transition on the properties of Al:ZnO transparent conducting oxide layer by radio frequency magnetron sputtering system |
| title_fullStr | Effect of deposition regime transition on the properties of Al:ZnO transparent conducting oxide layer by radio frequency magnetron sputtering system |
| title_full_unstemmed | Effect of deposition regime transition on the properties of Al:ZnO transparent conducting oxide layer by radio frequency magnetron sputtering system |
| title_short | Effect of deposition regime transition on the properties of Al:ZnO transparent conducting oxide layer by radio frequency magnetron sputtering system |
| title_sort | effect of deposition regime transition on the properties of al:zno transparent conducting oxide layer by radio frequency magnetron sputtering system |
| topic | Aluminum coatings Conductive films Crystal atomic structure Crystal lattices Descaling Hard facing Magnetron sputtering Transparent conducting oxides X ray diffraction analysis Zinc oxide Aluminum zinc oxides Aluminum-doped zinc oxide thin films Deposition regime transition Deposition regimes Energy Kinetic limited regime Lateral deposition Regime transition Thermodynamic limited regime Vertical depositions Crystal orientation |
| url_provider | http://dspace.uniten.edu.my/ |