Optimisation of N-channel trench power MOSFET using 2 k factorial design method
The main objective of this research is to optimize the trench depth, trench width, epitaxial resistivity and epitaxial thickness in trench power MOSFET so as to obtain high breakdown voltage but low on-resistance. Optimisation of these parameters are based on 2 k factorial design method for achievin...
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2023
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| _version_ | 1833411429975195648 |
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| author | Nur S.I. Ibrahim A. Hafizah H. |
| author2 | 56402634600 |
| author_facet | 56402634600 Nur S.I. Ibrahim A. Hafizah H. |
| author_sort | Nur S.I. |
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| collection | Institutional Repository |
| content_provider | Universiti Tenaga Nasional |
| content_source | UNITEN Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | The main objective of this research is to optimize the trench depth, trench width, epitaxial resistivity and epitaxial thickness in trench power MOSFET so as to obtain high breakdown voltage but low on-resistance. Optimisation of these parameters are based on 2 k factorial design method for achieving specific on-resistance 0.1 m?cm 2 and blocking voltage higher than 30 V. ATHENA and ATLAS software from Silvaco Int. were used for fabrication simulation and device electrical characterisation. The results obtained were, the optimisation value for trench width was 1.25?m, trench depth was 1.25 ?m, epitaxial thickness was 4.75 ?m and epitaxial resistivity was 032 ?cm. The predictive value of breakdown voltage was 39.41 V and significant to factors trench depth, epitaxial thickness and epitaxial resistivity. The predictive value for on-resistance was 0.105 m?cm 2 with significant to factors trench depth, epitaxial thickness and epitaxial resistivity. In conclusion, 2 k factorial design method is successfully utilised in optimizing n-channel trench power MOSFET. |
| format | Article |
| id | my.uniten.dspace-30832 |
| institution | Universiti Tenaga Nasional |
| publishDate | 2023 |
| record_format | dspace |
| spelling | my.uniten.dspace-308322023-12-29T15:54:13Z Optimisation of N-channel trench power MOSFET using 2 k factorial design method Nur S.I. Ibrahim A. Hafizah H. 56402634600 12792216600 12784787500 2 <sup>k</sup> factorial design method Optimisation Trench power mosfet The main objective of this research is to optimize the trench depth, trench width, epitaxial resistivity and epitaxial thickness in trench power MOSFET so as to obtain high breakdown voltage but low on-resistance. Optimisation of these parameters are based on 2 k factorial design method for achieving specific on-resistance 0.1 m?cm 2 and blocking voltage higher than 30 V. ATHENA and ATLAS software from Silvaco Int. were used for fabrication simulation and device electrical characterisation. The results obtained were, the optimisation value for trench width was 1.25?m, trench depth was 1.25 ?m, epitaxial thickness was 4.75 ?m and epitaxial resistivity was 032 ?cm. The predictive value of breakdown voltage was 39.41 V and significant to factors trench depth, epitaxial thickness and epitaxial resistivity. The predictive value for on-resistance was 0.105 m?cm 2 with significant to factors trench depth, epitaxial thickness and epitaxial resistivity. In conclusion, 2 k factorial design method is successfully utilised in optimizing n-channel trench power MOSFET. Final 2023-12-29T07:54:13Z 2023-12-29T07:54:13Z 2009 Article 2-s2.0-70350787085 https://www.scopus.com/inward/record.uri?eid=2-s2.0-70350787085&partnerID=40&md5=9540d9fba1c7696fbd159613440d2a7b https://irepository.uniten.edu.my/handle/123456789/30832 38 5 693 698 Scopus |
| spellingShingle | 2 <sup>k</sup> factorial design method Optimisation Trench power mosfet Nur S.I. Ibrahim A. Hafizah H. Optimisation of N-channel trench power MOSFET using 2 k factorial design method |
| title | Optimisation of N-channel trench power MOSFET using 2 k factorial design method |
| title_full | Optimisation of N-channel trench power MOSFET using 2 k factorial design method |
| title_fullStr | Optimisation of N-channel trench power MOSFET using 2 k factorial design method |
| title_full_unstemmed | Optimisation of N-channel trench power MOSFET using 2 k factorial design method |
| title_short | Optimisation of N-channel trench power MOSFET using 2 k factorial design method |
| title_sort | optimisation of n-channel trench power mosfet using 2 k factorial design method |
| topic | 2 <sup>k</sup> factorial design method Optimisation Trench power mosfet |
| url_provider | http://dspace.uniten.edu.my/ |