Space-Charge-Limited Dark Injection (SCL DI) transient measurements
It is not an easy task to probe the mobility of nanoscale thin layers without using expensive and sophisticated equipments such as Time-of-flight photocurrent charge carrier mobility measurement. We present here a powerful yet cost-effective technique, namely the Space-Charge-Limited Dark Injection...
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2023
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| _version_ | 1833351779611312128 |
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| author | Yap B.K. Koh S.P. Tiong S.K. Ong C.N. |
| author2 | 26649255900 |
| author_facet | 26649255900 Yap B.K. Koh S.P. Tiong S.K. Ong C.N. |
| author_sort | Yap B.K. |
| building | UNITEN Library |
| collection | Institutional Repository |
| content_provider | Universiti Tenaga Nasional |
| content_source | UNITEN Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | It is not an easy task to probe the mobility of nanoscale thin layers without using expensive and sophisticated equipments such as Time-of-flight photocurrent charge carrier mobility measurement. We present here a powerful yet cost-effective technique, namely the Space-Charge-Limited Dark Injection (SCL DI) Transient Measurement that allows us to confirm an ohmic injecting interface, to determine the mobility values of the bulk materials and to study the injection efficiency of the interfaces of the semiconductor materials. � 2010 IEEE. |
| format | Conference paper |
| id | my.uniten.dspace-30684 |
| institution | Universiti Tenaga Nasional |
| publishDate | 2023 |
| record_format | dspace |
| spelling | my.uniten.dspace-306842023-12-29T15:51:19Z Space-Charge-Limited Dark Injection (SCL DI) transient measurements Yap B.K. Koh S.P. Tiong S.K. Ong C.N. 26649255900 22951210700 15128307800 36570734800 Semiconductor materials Transient analysis Bulk materials Charge-carrier mobility Dark injection Injection efficiency Mobility value Nano scale Space-charge-limited Thin layers Time-of-flight photocurrents Transient measurement Carrier mobility It is not an easy task to probe the mobility of nanoscale thin layers without using expensive and sophisticated equipments such as Time-of-flight photocurrent charge carrier mobility measurement. We present here a powerful yet cost-effective technique, namely the Space-Charge-Limited Dark Injection (SCL DI) Transient Measurement that allows us to confirm an ohmic injecting interface, to determine the mobility values of the bulk materials and to study the injection efficiency of the interfaces of the semiconductor materials. � 2010 IEEE. Final 2023-12-29T07:51:19Z 2023-12-29T07:51:19Z 2010 Conference paper 10.1109/SMELEC.2010.5549542 2-s2.0-77957576466 https://www.scopus.com/inward/record.uri?eid=2-s2.0-77957576466&doi=10.1109%2fSMELEC.2010.5549542&partnerID=40&md5=75f8cc803081b3b4134b5aa0347725db https://irepository.uniten.edu.my/handle/123456789/30684 5549542 192 194 Scopus |
| spellingShingle | Semiconductor materials Transient analysis Bulk materials Charge-carrier mobility Dark injection Injection efficiency Mobility value Nano scale Space-charge-limited Thin layers Time-of-flight photocurrents Transient measurement Carrier mobility Yap B.K. Koh S.P. Tiong S.K. Ong C.N. Space-Charge-Limited Dark Injection (SCL DI) transient measurements |
| title | Space-Charge-Limited Dark Injection (SCL DI) transient measurements |
| title_full | Space-Charge-Limited Dark Injection (SCL DI) transient measurements |
| title_fullStr | Space-Charge-Limited Dark Injection (SCL DI) transient measurements |
| title_full_unstemmed | Space-Charge-Limited Dark Injection (SCL DI) transient measurements |
| title_short | Space-Charge-Limited Dark Injection (SCL DI) transient measurements |
| title_sort | space-charge-limited dark injection (scl di) transient measurements |
| topic | Semiconductor materials Transient analysis Bulk materials Charge-carrier mobility Dark injection Injection efficiency Mobility value Nano scale Space-charge-limited Thin layers Time-of-flight photocurrents Transient measurement Carrier mobility |
| url_provider | http://dspace.uniten.edu.my/ |