Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method
In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process param...
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2023
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| author | Salehuddin F. Ahmad I. Hamid F.A. Zaharim A. Elgomati H.A. Majlis B.Y. Apte P.R. |
| author2 | 36239165300 |
| author_facet | 36239165300 Salehuddin F. Ahmad I. Hamid F.A. Zaharim A. Elgomati H.A. Majlis B.Y. Apte P.R. |
| author_sort | Salehuddin F. |
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| content_provider | Universiti Tenaga Nasional |
| content_source | UNITEN Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process parameters which used were Source/Drain (S/D) implant dose, oxide growth temperature and silicide anneal temperature. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, the most effective process parameters with respect to VTH and ILeak are halo implant dose (40%) and S/D implant dose (52%) respectively. Whereas the second ranking factor affecting VTH and ILeak are oxide growth temperature (32%) and halo implant dose (34%) respectively. The results show that after optimizations approaches is -0.157V at ILeak=0.195mA/?m. |
| format | Article |
| id | my.uniten.dspace-30463 |
| institution | Universiti Tenaga Nasional |
| publishDate | 2023 |
| record_format | dspace |
| spelling | my.uniten.dspace-304632023-12-29T15:48:08Z Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method Salehuddin F. Ahmad I. Hamid F.A. Zaharim A. Elgomati H.A. Majlis B.Y. Apte P.R. 36239165300 12792216600 6603573875 15119466900 36536722700 6603071546 55725529100 HALO structure Optimization P-type mosfets device Taguchi method Growth temperature MOSFET devices Optimization Silicides Simulators Taguchi methods Anneal temperatures Device simulators Halo implants HALO structure Metal-oxide-semiconductor field-effect transistor MOSFETs P-type Process parameters Process simulators Structural optimization In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process parameters which used were Source/Drain (S/D) implant dose, oxide growth temperature and silicide anneal temperature. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, the most effective process parameters with respect to VTH and ILeak are halo implant dose (40%) and S/D implant dose (52%) respectively. Whereas the second ranking factor affecting VTH and ILeak are oxide growth temperature (32%) and halo implant dose (34%) respectively. The results show that after optimizations approaches is -0.157V at ILeak=0.195mA/?m. Final 2023-12-29T07:48:08Z 2023-12-29T07:48:08Z 2011 Article 2-s2.0-84871458972 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84871458972&partnerID=40&md5=ca09d6c1530fb4ca53e7e8ab5b4aa4b3 https://irepository.uniten.edu.my/handle/123456789/30463 51 1136 1142 Scopus |
| spellingShingle | HALO structure Optimization P-type mosfets device Taguchi method Growth temperature MOSFET devices Optimization Silicides Simulators Taguchi methods Anneal temperatures Device simulators Halo implants HALO structure Metal-oxide-semiconductor field-effect transistor MOSFETs P-type Process parameters Process simulators Structural optimization Salehuddin F. Ahmad I. Hamid F.A. Zaharim A. Elgomati H.A. Majlis B.Y. Apte P.R. Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method |
| title | Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method |
| title_full | Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method |
| title_fullStr | Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method |
| title_full_unstemmed | Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method |
| title_short | Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method |
| title_sort | optimization of halo structure effects in 45nm p-type mosfets device using taguchi method |
| topic | HALO structure Optimization P-type mosfets device Taguchi method Growth temperature MOSFET devices Optimization Silicides Simulators Taguchi methods Anneal temperatures Device simulators Halo implants HALO structure Metal-oxide-semiconductor field-effect transistor MOSFETs P-type Process parameters Process simulators Structural optimization |
| url_provider | http://dspace.uniten.edu.my/ |