High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well
Silicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The present work investigates the performance of a virtual lateral PIN photodiode with a SiGe...
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2023
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| author | Menon P.S. Tasirin S.K. Ahmad I. Abdullah S.F. |
| author2 | 57201289731 |
| author_facet | 57201289731 Menon P.S. Tasirin S.K. Ahmad I. Abdullah S.F. |
| author_sort | Menon P.S. |
| building | UNITEN Library |
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| content_provider | Universiti Tenaga Nasional |
| content_source | UNITEN Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | Silicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The present work investigates the performance of a virtual lateral PIN photodiode with a SiGe/Si multi-quantum well structure. In this paper, 5 periods of stacked SiGe quantum wells were grown on Si(100). A lateral PIN photodiode consisting of the SiGe/Si multi-quantum well layers as the active absorption layer with intensity response in the 700-1600 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.89 A/W, 71% and 21 GHz respectively for design parameters of intrinsic region length of 6 ?m, photoabsorption layer thickness of 50 ?m, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the SiGe/Si multi-quantum well solution in achieving the desired high performance photodiode was achieved. � 2012 IEEE. |
| format | Conference paper |
| id | my.uniten.dspace-30300 |
| institution | Universiti Tenaga Nasional |
| publishDate | 2023 |
| record_format | dspace |
| spelling | my.uniten.dspace-303002023-12-29T15:46:28Z High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well Menon P.S. Tasirin S.K. Ahmad I. Abdullah S.F. 57201289731 55602329100 12792216600 14319069500 PIN photodiode SiGe/Si multi quantum well (MQW) Silvaco SOI Diodes Frequency response Photodiodes Active-absorption Design parameters Lateral PIN photodiodes Layer thickness Multi-quantum well structures Multiquantum wells Optical power Photoabsorptions Pin photodiode Responsivity Sensing applications Si(1 0 0) SiGe quantum wells SiGe/Si Silicon-on-insulators Silvaco SOI Wavelength ranges Semiconductor quantum wells Silicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The present work investigates the performance of a virtual lateral PIN photodiode with a SiGe/Si multi-quantum well structure. In this paper, 5 periods of stacked SiGe quantum wells were grown on Si(100). A lateral PIN photodiode consisting of the SiGe/Si multi-quantum well layers as the active absorption layer with intensity response in the 700-1600 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.89 A/W, 71% and 21 GHz respectively for design parameters of intrinsic region length of 6 ?m, photoabsorption layer thickness of 50 ?m, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the SiGe/Si multi-quantum well solution in achieving the desired high performance photodiode was achieved. � 2012 IEEE. Final 2023-12-29T07:46:27Z 2023-12-29T07:46:27Z 2012 Conference paper 10.1109/SMElec.2012.6417172 2-s2.0-84874182629 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84874182629&doi=10.1109%2fSMElec.2012.6417172&partnerID=40&md5=248e9c1418a64a6e60833faefc7d9cd0 https://irepository.uniten.edu.my/handle/123456789/30300 6417172 403 406 Scopus |
| spellingShingle | PIN photodiode SiGe/Si multi quantum well (MQW) Silvaco SOI Diodes Frequency response Photodiodes Active-absorption Design parameters Lateral PIN photodiodes Layer thickness Multi-quantum well structures Multiquantum wells Optical power Photoabsorptions Pin photodiode Responsivity Sensing applications Si(1 0 0) SiGe quantum wells SiGe/Si Silicon-on-insulators Silvaco SOI Wavelength ranges Semiconductor quantum wells Menon P.S. Tasirin S.K. Ahmad I. Abdullah S.F. High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well |
| title | High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well |
| title_full | High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well |
| title_fullStr | High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well |
| title_full_unstemmed | High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well |
| title_short | High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well |
| title_sort | high performance of a soi-based lateral pin photodiode using sige/si multilayer quantum well |
| topic | PIN photodiode SiGe/Si multi quantum well (MQW) Silvaco SOI Diodes Frequency response Photodiodes Active-absorption Design parameters Lateral PIN photodiodes Layer thickness Multi-quantum well structures Multiquantum wells Optical power Photoabsorptions Pin photodiode Responsivity Sensing applications Si(1 0 0) SiGe quantum wells SiGe/Si Silicon-on-insulators Silvaco SOI Wavelength ranges Semiconductor quantum wells |
| url_provider | http://dspace.uniten.edu.my/ |