Cubic Silicon Carbide (3C�SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell

Buffer layers; Heterojunctions; II-VI semiconductors; Incident light; Semiconductor doping; Silicon carbide; Solar cells; Wide band gap semiconductors; 3c�SiC; CdTe solar cells; Cubic silicon carbide (3C-SiC); High stability; Higher efficiency; Highly stables; Light intensity; Photovoltaics; Potenti...

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Main Authors: Sameera J.N., Islam M.A., Islam S., Hossain T., Sobayel M.K., Akhtaruzzaman M., Amin N., Rashid M.J.
Other Authors: 57220953272
Format: Article
Published: Elsevier B.V. 2023
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_version_ 1833352149980938240
author Sameera J.N.
Islam M.A.
Islam S.
Hossain T.
Sobayel M.K.
Akhtaruzzaman M.
Amin N.
Rashid M.J.
author2 57220953272
author_facet 57220953272
Sameera J.N.
Islam M.A.
Islam S.
Hossain T.
Sobayel M.K.
Akhtaruzzaman M.
Amin N.
Rashid M.J.
author_sort Sameera J.N.
building UNITEN Library
collection Institutional Repository
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
continent Asia
country Malaysia
description Buffer layers; Heterojunctions; II-VI semiconductors; Incident light; Semiconductor doping; Silicon carbide; Solar cells; Wide band gap semiconductors; 3c�SiC; CdTe solar cells; Cubic silicon carbide (3C-SiC); High stability; Higher efficiency; Highly stables; Light intensity; Photovoltaics; Potential buffer layer; Potential materials; Cadmium telluride
format Article
id my.uniten.dspace-27280
institution Universiti Tenaga Nasional
publishDate 2023
publisher Elsevier B.V.
record_format dspace
spelling my.uniten.dspace-272802023-05-29T17:42:04Z Cubic Silicon Carbide (3C�SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell Sameera J.N. Islam M.A. Islam S. Hossain T. Sobayel M.K. Akhtaruzzaman M. Amin N. Rashid M.J. 57220953272 57220973693 57213340399 36537101800 57194049079 57195441001 7102424614 56754641100 Buffer layers; Heterojunctions; II-VI semiconductors; Incident light; Semiconductor doping; Silicon carbide; Solar cells; Wide band gap semiconductors; 3c�SiC; CdTe solar cells; Cubic silicon carbide (3C-SiC); High stability; Higher efficiency; Highly stables; Light intensity; Photovoltaics; Potential buffer layer; Potential materials; Cadmium telluride Cubic Silicon Carbide (3C�SiC) is a potential material for use in photovoltaics for its significant advancement in growth in terms of crystal quality and domain size. Hence, 3C�SiC has been introduced here as an alternative non-toxic buffer layer for heterojunction CdTe solar cell. The solar cell is designed for the study consisted of multi-junction semiconductor layers such as p-CdTe/n-3C�SiC/n-SnO2. Device modeling of the novel CdTe solar cell including the thickness and doping concentration of the novel buffer layer 3C�SiC are investigated and optimized using SCAPS-1D software. Also, the defect density in the buffer layer is studied to see the tolerance of the proposed device structure. The working temperature and incident light intensity are also varied to deduce the effect of environmental conditions on efficient PV operation. � 2021 Elsevier B.V. Final 2023-05-29T09:42:04Z 2023-05-29T09:42:04Z 2022 Article 10.1016/j.optmat.2021.111911 2-s2.0-85122077543 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85122077543&doi=10.1016%2fj.optmat.2021.111911&partnerID=40&md5=1f9aec82de6a233ccd02be5e4228cb3d https://irepository.uniten.edu.my/handle/123456789/27280 123 111911 Elsevier B.V. Scopus
spellingShingle Sameera J.N.
Islam M.A.
Islam S.
Hossain T.
Sobayel M.K.
Akhtaruzzaman M.
Amin N.
Rashid M.J.
Cubic Silicon Carbide (3C�SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell
title Cubic Silicon Carbide (3C�SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell
title_full Cubic Silicon Carbide (3C�SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell
title_fullStr Cubic Silicon Carbide (3C�SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell
title_full_unstemmed Cubic Silicon Carbide (3C�SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell
title_short Cubic Silicon Carbide (3C�SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell
title_sort cubic silicon carbide (3c�sic) as a buffer layer for high efficiency and highly stable cdte solar cell
url_provider http://dspace.uniten.edu.my/