Work function variations on electrostatic and RF performances of JLSDGM Device
This paper offers a systematic analysis on the impact of work function (WF) variations on electrostatic and radio frequency (RF) performances of n-channel junctionless strained double gate (DG) (n-JLSDGM) metal oxide semiconductor field effect transistor (MOSFET). The study has been performed under...
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Institute of Advanced Engineering and Science
2023
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| author | Kaharudin K.K.E. Zain A.S.M. Roslan A.F. Ahmad I. Salehuddin F. |
| author2 | 56472706900 |
| author_facet | 56472706900 Kaharudin K.K.E. Zain A.S.M. Roslan A.F. Ahmad I. Salehuddin F. |
| author_sort | Kaharudin K.K.E. |
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| content_provider | Universiti Tenaga Nasional |
| content_source | UNITEN Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | This paper offers a systematic analysis on the impact of work function (WF) variations on electrostatic and radio frequency (RF) performances of n-channel junctionless strained double gate (DG) (n-JLSDGM) metal oxide semiconductor field effect transistor (MOSFET). The study has been performed under othe constant level of design parameters that operates in saturation as a transconductance amplifier, considering the dependence of electrostatic and RF performance on the variation of WF. Furthermore, this paper aims to provide physical insight into the improved electrostatic and RF performances of the proposed n-JLSDGM device. The device layout and characteristics were designed and extracted respectively via a comprehensive 2-D simulation. Device performances such as on-state current (ION), off-state current (IOFF), on-off current ratio, subthreshold swing (SS), intrinsic capacitances, dynamic power dissipation (Pdyn), cut-off frequency (fT) and maximum oscillation frequency (fmax) are intensively investigated in conjunction with WF variations. � 2021 Institute of Advanced Engineering and Science. All rights reserved. |
| format | Article |
| id | my.uniten.dspace-26111 |
| institution | Universiti Tenaga Nasional |
| publishDate | 2023 |
| publisher | Institute of Advanced Engineering and Science |
| record_format | dspace |
| spelling | my.uniten.dspace-261112023-05-29T17:06:54Z Work function variations on electrostatic and RF performances of JLSDGM Device Kaharudin K.K.E. Zain A.S.M. Roslan A.F. Ahmad I. Salehuddin F. 56472706900 55925762500 57203514087 12792216600 36239165300 This paper offers a systematic analysis on the impact of work function (WF) variations on electrostatic and radio frequency (RF) performances of n-channel junctionless strained double gate (DG) (n-JLSDGM) metal oxide semiconductor field effect transistor (MOSFET). The study has been performed under othe constant level of design parameters that operates in saturation as a transconductance amplifier, considering the dependence of electrostatic and RF performance on the variation of WF. Furthermore, this paper aims to provide physical insight into the improved electrostatic and RF performances of the proposed n-JLSDGM device. The device layout and characteristics were designed and extracted respectively via a comprehensive 2-D simulation. Device performances such as on-state current (ION), off-state current (IOFF), on-off current ratio, subthreshold swing (SS), intrinsic capacitances, dynamic power dissipation (Pdyn), cut-off frequency (fT) and maximum oscillation frequency (fmax) are intensively investigated in conjunction with WF variations. � 2021 Institute of Advanced Engineering and Science. All rights reserved. Final 2023-05-29T09:06:54Z 2023-05-29T09:06:54Z 2021 Article 10.11591/ijeecs.v23.i1.pp150-161 2-s2.0-85109449633 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85109449633&doi=10.11591%2fijeecs.v23.i1.pp150-161&partnerID=40&md5=c9ce95a689c4869c76cbb0b048eca60f https://irepository.uniten.edu.my/handle/123456789/26111 23 1 150 161 All Open Access, Gold, Green Institute of Advanced Engineering and Science Scopus |
| spellingShingle | Kaharudin K.K.E. Zain A.S.M. Roslan A.F. Ahmad I. Salehuddin F. Work function variations on electrostatic and RF performances of JLSDGM Device |
| title | Work function variations on electrostatic and RF performances of JLSDGM Device |
| title_full | Work function variations on electrostatic and RF performances of JLSDGM Device |
| title_fullStr | Work function variations on electrostatic and RF performances of JLSDGM Device |
| title_full_unstemmed | Work function variations on electrostatic and RF performances of JLSDGM Device |
| title_short | Work function variations on electrostatic and RF performances of JLSDGM Device |
| title_sort | work function variations on electrostatic and rf performances of jlsdgm device |
| url_provider | http://dspace.uniten.edu.my/ |