Effect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cell

Aluminum gallium arsenide; Conversion efficiency; Efficiency; Electronic design automation; Gallium arsenide; III-V semiconductors; Nanosensors; Nanotechnology; Photoelectrochemical cells; Photovoltaic cells; Photovoltaic effects; Semiconducting gallium; Semiconductor alloys; Active regions; Back su...

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Main Authors: Gamel M., Jern K.P., Rashid E., Jing L.H., Yao L.K., Wong B.
Other Authors: 57215306835
Format: Conference Paper
Published: Institute of Electrical and Electronics Engineers Inc. 2023
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_version_ 1833351701774467072
author Gamel M.
Jern K.P.
Rashid E.
Jing L.H.
Yao L.K.
Wong B.
author2 57215306835
author_facet 57215306835
Gamel M.
Jern K.P.
Rashid E.
Jing L.H.
Yao L.K.
Wong B.
author_sort Gamel M.
building UNITEN Library
collection Institutional Repository
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
continent Asia
country Malaysia
description Aluminum gallium arsenide; Conversion efficiency; Efficiency; Electronic design automation; Gallium arsenide; III-V semiconductors; Nanosensors; Nanotechnology; Photoelectrochemical cells; Photovoltaic cells; Photovoltaic effects; Semiconducting gallium; Semiconductor alloys; Active regions; Back surface fields; Band diagrams; Concentrated solar cells; Gallium arsenide cells; Illumination conditions; Silvaco; TCAD software; Solar cells
format Conference Paper
id my.uniten.dspace-24588
institution Universiti Tenaga Nasional
publishDate 2023
publisher Institute of Electrical and Electronics Engineers Inc.
record_format dspace
spelling my.uniten.dspace-245882023-05-29T15:24:48Z Effect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cell Gamel M. Jern K.P. Rashid E. Jing L.H. Yao L.K. Wong B. 57215306835 37461740800 57215329739 57190622221 56903550000 57215329405 Aluminum gallium arsenide; Conversion efficiency; Efficiency; Electronic design automation; Gallium arsenide; III-V semiconductors; Nanosensors; Nanotechnology; Photoelectrochemical cells; Photovoltaic cells; Photovoltaic effects; Semiconducting gallium; Semiconductor alloys; Active regions; Back surface fields; Band diagrams; Concentrated solar cells; Gallium arsenide cells; Illumination conditions; Silvaco; TCAD software; Solar cells GaAs structures are commonly used in concentrated solar cell application, whereas the active region of the cell requires front surface field (FSF) and back surface field (BSF) to complete the band diagram and to improve the conversion efficiency up to 22 % under AM 1.5 illumination condition. However, the integration of different FSF and BSF materials such as AlGaAs, InGaP and InAlP contribute to diverse performance. A fair comparison between these materials will help to optimize the performance of GaAs devices. In this work, Silvaco TCAD software was used to simulate GaAs PV cell with different FSF and BSF materials under 1-sun and 100-sun AM 1.5 illumination condition. A conversion efficiency of 24.08 % and 27.22 % was achieved with InAlP FSF layer under 1-sun and 100-sun AM 1.5 spectrum, respectively. The results obtained from this study will contribute to a better understanding on the effect of FSF and BSF layers while obtaining the optimum FSF and BSF material for the GaAs-based photovoltaic cell. � 2019 IEEE. Final 2023-05-29T07:24:48Z 2023-05-29T07:24:48Z 2019 Conference Paper 10.1109/SENSORSNANO44414.2019.8940098 2-s2.0-85078146677 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078146677&doi=10.1109%2fSENSORSNANO44414.2019.8940098&partnerID=40&md5=e5dddf8ac7b9a23fdbdf2db9f1323cc7 https://irepository.uniten.edu.my/handle/123456789/24588 8940098 Institute of Electrical and Electronics Engineers Inc. Scopus
spellingShingle Gamel M.
Jern K.P.
Rashid E.
Jing L.H.
Yao L.K.
Wong B.
Effect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cell
title Effect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cell
title_full Effect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cell
title_fullStr Effect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cell
title_full_unstemmed Effect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cell
title_short Effect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cell
title_sort effect of front-surface-field and back-surface-field on the performance of gaas based-photovoltaic cell
url_provider http://dspace.uniten.edu.my/