Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging
Avalanche photodiodes; Characterization; Diodes; Infrared imaging; Leakage currents; Nitrides; Photodiodes; Photonics; Silica; Silicon nitride; Thermography (imaging); B-staged bisbenzocyclobutene; Current-voltage characterization; InAs; Low noise; Surface leakage currents; Surface passivation; Pass...
Saved in:
| Main Authors: | , , , |
|---|---|
| Other Authors: | |
| Format: | Conference Paper |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2023
|
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1833411247954984960 |
|---|---|
| author | Ker P.J. Marshall A.R.J. Tan C.H. David J.P.R. |
| author2 | 37461740800 |
| author_facet | 37461740800 Ker P.J. Marshall A.R.J. Tan C.H. David J.P.R. |
| author_sort | Ker P.J. |
| building | UNITEN Library |
| collection | Institutional Repository |
| content_provider | Universiti Tenaga Nasional |
| content_source | UNITEN Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | Avalanche photodiodes; Characterization; Diodes; Infrared imaging; Leakage currents; Nitrides; Photodiodes; Photonics; Silica; Silicon nitride; Thermography (imaging); B-staged bisbenzocyclobutene; Current-voltage characterization; InAs; Low noise; Surface leakage currents; Surface passivation; Passivation |
| format | Conference Paper |
| id | my.uniten.dspace-22687 |
| institution | Universiti Tenaga Nasional |
| publishDate | 2023 |
| publisher | Institute of Electrical and Electronics Engineers Inc. |
| record_format | dspace |
| spelling | my.uniten.dspace-226872023-05-29T14:11:39Z Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging Ker P.J. Marshall A.R.J. Tan C.H. David J.P.R. 37461740800 7401645580 57189468185 25647614700 Avalanche photodiodes; Characterization; Diodes; Infrared imaging; Leakage currents; Nitrides; Photodiodes; Photonics; Silica; Silicon nitride; Thermography (imaging); B-staged bisbenzocyclobutene; Current-voltage characterization; InAs; Low noise; Surface leakage currents; Surface passivation; Passivation The effect of surface passivation on the etched-mesa InAs diodes was investigated by carrying out the fabrication and passivation of InAs diodes. Extensive and detailed current-voltage characterization was done to determine the most suitable type of insulating material for the surface passivation. SU-8, silicon nitride, silicon dioxide and B-staged Bisbenzocyclobutene were used for the purpose of minimizing the conductivity of the etched mesa surface of InAs diodes. The forward- and reverse-biased characteristics of InAs diodes were measured at room temperature and 77 K in order to carefully investigate the effect of different surface passivation schemes. The results of this work categorically indicated that SU-8 is the most effective surface passivation material for InAs diodes, whereas silicon nitride and silicon dioxide have contributed to an even higher surface leakage current. Furthermore, SU-8 passivated InAs diodes were more sustainable to high bias voltages and its robustness increases the opportunity of its utilization for practical applications such as infrared imaging. � 2016 IEEE. Final 2023-05-29T06:11:39Z 2023-05-29T06:11:39Z 2016 Conference Paper 10.1109/ICP.2016.7510018 2-s2.0-84981736080 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84981736080&doi=10.1109%2fICP.2016.7510018&partnerID=40&md5=4a99f3d36c39853bf96d280df191d5a3 https://irepository.uniten.edu.my/handle/123456789/22687 7510018 All Open Access, Green Institute of Electrical and Electronics Engineers Inc. Scopus |
| spellingShingle | Ker P.J. Marshall A.R.J. Tan C.H. David J.P.R. Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging |
| title | Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging |
| title_full | Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging |
| title_fullStr | Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging |
| title_full_unstemmed | Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging |
| title_short | Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging |
| title_sort | surface passivation of inas avalanche photodiodes for low-noise infrared imaging |
| url_provider | http://dspace.uniten.edu.my/ |