N.B, A., I.B, A., B.B.Y, M., I.B.A, F., & 26422792900. (2023). Influence of process parameters on threshold voltage and leakage current in 18nm NMOS device. American Institute of Physics Inc.
Chicago Style (17th ed.) CitationN.B, Atan, Ahmad I.B, Majlis B.B.Y, Fauzi I.B.A, and 26422792900. Influence of Process Parameters on Threshold Voltage and Leakage Current in 18nm NMOS Device. American Institute of Physics Inc, 2023.
MLA (9th ed.) CitationN.B, Atan, et al. Influence of Process Parameters on Threshold Voltage and Leakage Current in 18nm NMOS Device. American Institute of Physics Inc, 2023.
Warning: These citations may not always be 100% accurate.
