Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor
This paper reports on the effects of the Halo structure variations on threshold voltage (Vth) in a 22 nm gate length high-k/metal gate planar NMOS transistor. Since the Vth is one of the important physical parameter for determining the functionality of complementary metal-oxide-semiconductor device,...
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2023
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| author | Afifah Maheran A.H. Menon P.S. Ahmad I. Shaari S. |
| author2 | 36570222300 |
| author_facet | 36570222300 Afifah Maheran A.H. Menon P.S. Ahmad I. Shaari S. |
| author_sort | Afifah Maheran A.H. |
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| content_provider | Universiti Tenaga Nasional |
| content_source | UNITEN Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | This paper reports on the effects of the Halo structure variations on threshold voltage (Vth) in a 22 nm gate length high-k/metal gate planar NMOS transistor. Since the Vth is one of the important physical parameter for determining the functionality of complementary metal-oxide-semiconductor device, this experiment will focus on finding the best combination on process parameter to achieve the best value of Vth. The Halo structure variable process parameters are the Halo implantation dose, the Halo implantation tilting angle, the Source/Drain implantation dose and the compensation implantation dose. The design of the planar device consists of a combination of high permittivity material (high-k) and a metal gate. Titanium dioxide was used as the high-k material instead of the traditional SiO 2 dielectric and tungsten silicide was used as the metal gate. The optimization process was executed using Taguchi's L9 array to obtain a robust design. Taguchi's Nominal-the-Best signal-to-noise ratio was used in an effort to minimize the variance of Vth. The results show that the Vth values have least variance and the mean value can be adjusted to 0.289 V±12.7% which is in line with projections made by the International Technology Roadmap for Semiconductors. © 2013 Elsevier Ltd. All rights reserved. |
| format | Article |
| id | my.uniten.dspace-22195 |
| institution | Universiti Tenaga Nasional |
| publishDate | 2023 |
| record_format | dspace |
| spelling | my.uniten.dspace-221952023-05-16T10:48:19Z Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor Afifah Maheran A.H. Menon P.S. Ahmad I. Shaari S. 36570222300 57201289731 12792216600 6603595092 This paper reports on the effects of the Halo structure variations on threshold voltage (Vth) in a 22 nm gate length high-k/metal gate planar NMOS transistor. Since the Vth is one of the important physical parameter for determining the functionality of complementary metal-oxide-semiconductor device, this experiment will focus on finding the best combination on process parameter to achieve the best value of Vth. The Halo structure variable process parameters are the Halo implantation dose, the Halo implantation tilting angle, the Source/Drain implantation dose and the compensation implantation dose. The design of the planar device consists of a combination of high permittivity material (high-k) and a metal gate. Titanium dioxide was used as the high-k material instead of the traditional SiO 2 dielectric and tungsten silicide was used as the metal gate. The optimization process was executed using Taguchi's L9 array to obtain a robust design. Taguchi's Nominal-the-Best signal-to-noise ratio was used in an effort to minimize the variance of Vth. The results show that the Vth values have least variance and the mean value can be adjusted to 0.289 V±12.7% which is in line with projections made by the International Technology Roadmap for Semiconductors. © 2013 Elsevier Ltd. All rights reserved. Final 2023-05-16T02:48:19Z 2023-05-16T02:48:19Z 2014 Article 10.1016/j.mssp.2013.09.009 2-s2.0-84885671344 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84885671344&doi=10.1016%2fj.mssp.2013.09.009&partnerID=40&md5=2846d24fc316e0b83660fcddcfd15e86 https://irepository.uniten.edu.my/handle/123456789/22195 17 155 161 Scopus |
| spellingShingle | Afifah Maheran A.H. Menon P.S. Ahmad I. Shaari S. Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor |
| title | Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor |
| title_full | Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor |
| title_fullStr | Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor |
| title_full_unstemmed | Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor |
| title_short | Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor |
| title_sort | effect of halo structure variations on the threshold voltage of a 22 nm gate length nmos transistor |
| url_provider | http://dspace.uniten.edu.my/ |