Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method
In this research, orthogonal array of L27 in Taguchi Method was used to optimize the process parameters (control factors) variation in 45nm n-channel device with considering the interaction effect. The signal-to-noise (S/N) ratio and analysis of variance (ANOVA) are employed to study the performance...
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2023
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| author | Salehuddin F. Mohd Zain A.S. Idris N.M. Mat Yamin A.K. Abdul Hamid A.M. Ahmad I. Menon P.S. |
| author2 | 36239165300 |
| author_facet | 36239165300 Salehuddin F. Mohd Zain A.S. Idris N.M. Mat Yamin A.K. Abdul Hamid A.M. Ahmad I. Menon P.S. |
| author_sort | Salehuddin F. |
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| content_provider | Universiti Tenaga Nasional |
| content_source | UNITEN Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | In this research, orthogonal array of L27 in Taguchi Method was used to optimize the process parameters (control factors) variation in 45nm n-channel device with considering the interaction effect. The signal-to-noise (S/N) ratio and analysis of variance (ANOVA) are employed to study the performance characteristics of the device. There are only five process parameters (control factors) were varied for 3 levels to performed 27 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of Vth for every row of experiment. In this study, nominal-the-best characteristic was used in an effort to minimize the variance of Vth. The results show that the Vth values have least variance and percent different from the target value (0.287V) for this device is 1.42% (0.293V). This value is closer with International Technology Roadmap for Semiconductor (ITRS) prediction. © (2014) Trans Tech Publications, Switzerland. |
| format | Conference Paper |
| id | my.uniten.dspace-21920 |
| institution | Universiti Tenaga Nasional |
| publishDate | 2023 |
| record_format | dspace |
| spelling | my.uniten.dspace-219202023-05-16T10:46:04Z Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method Salehuddin F. Mohd Zain A.S. Idris N.M. Mat Yamin A.K. Abdul Hamid A.M. Ahmad I. Menon P.S. 36239165300 55925762500 57218121930 55808106600 7103120115 12792216600 57201289731 In this research, orthogonal array of L27 in Taguchi Method was used to optimize the process parameters (control factors) variation in 45nm n-channel device with considering the interaction effect. The signal-to-noise (S/N) ratio and analysis of variance (ANOVA) are employed to study the performance characteristics of the device. There are only five process parameters (control factors) were varied for 3 levels to performed 27 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of Vth for every row of experiment. In this study, nominal-the-best characteristic was used in an effort to minimize the variance of Vth. The results show that the Vth values have least variance and percent different from the target value (0.287V) for this device is 1.42% (0.293V). This value is closer with International Technology Roadmap for Semiconductor (ITRS) prediction. © (2014) Trans Tech Publications, Switzerland. Final 2023-05-16T02:46:04Z 2023-05-16T02:46:04Z 2014 Conference Paper 10.4028/www.scientific.net/AMR.903.297 2-s2.0-84896876859 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84896876859&doi=10.4028%2fwww.scientific.net%2fAMR.903.297&partnerID=40&md5=8641f7d4e0221cefe5423e7bbdf2e7ff https://irepository.uniten.edu.my/handle/123456789/21920 903 297 302 Scopus |
| spellingShingle | Salehuddin F. Mohd Zain A.S. Idris N.M. Mat Yamin A.K. Abdul Hamid A.M. Ahmad I. Menon P.S. Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method |
| title | Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method |
| title_full | Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method |
| title_fullStr | Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method |
| title_full_unstemmed | Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method |
| title_short | Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method |
| title_sort | analysis of threshold voltage variance in 45nm n-channel device using l27 orthogonal array method |
| url_provider | http://dspace.uniten.edu.my/ |