Analysis of corner effects of the vertical MOS transistors using 3D device simulation

THS TK7871.95.C44 2003

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Main Author: Chien Fat Chau
Format: text::Thesis
Language:en
Published: 2023
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_version_ 1833411803471675392
author Chien Fat Chau
author_facet Chien Fat Chau
author_sort Chien Fat Chau
building UNITEN Library
collection Institutional Repository
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
continent Asia
country Malaysia
description THS TK7871.95.C44 2003
format Resource Types::text::Thesis
id my.uniten.dspace-19397
institution Universiti Tenaga Nasional
language en
publishDate 2023
record_format dspace
spelling my.uniten.dspace-193972023-05-05T05:51:26Z Analysis of corner effects of the vertical MOS transistors using 3D device simulation Chien Fat Chau THS TK7871.95.C44 2003 2023-05-03T13:31:30Z 2023-05-03T13:31:30Z 2003-10 Resource Types::text::Thesis https://irepository.uniten.edu.my/handle/123456789/19397 en application/pdf
spellingShingle Chien Fat Chau
Analysis of corner effects of the vertical MOS transistors using 3D device simulation
title Analysis of corner effects of the vertical MOS transistors using 3D device simulation
title_full Analysis of corner effects of the vertical MOS transistors using 3D device simulation
title_fullStr Analysis of corner effects of the vertical MOS transistors using 3D device simulation
title_full_unstemmed Analysis of corner effects of the vertical MOS transistors using 3D device simulation
title_short Analysis of corner effects of the vertical MOS transistors using 3D device simulation
title_sort analysis of corner effects of the vertical mos transistors using 3d device simulation
url_provider http://dspace.uniten.edu.my/